Radiative recombination of InP and In1?xGaxP (0

1986 ◽  
Vol 44 (4) ◽  
pp. 378-380
Author(s):  
S. A. Manego ◽  
V. I. Osinskii ◽  
Yu. A. Gruzdev ◽  
O. Ya. Tikhonenko ◽  
T. O. Bud'ko
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Films

Characteristics of growth and radiative recombination of epitaxial layers InAsxP1?x(0

1990 ◽  
Vol 52 (1) ◽  
pp. 93-96
Author(s):  
V. A. Bykovskii ◽  
S. A. Manego ◽  
V. I. Osinskii
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Layers ◽  
Inp Substrates

Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition

2019 ◽  
Vol 62 (4) ◽  
pp. 473-479 ◽  
Author(s):  
S. V. Chernykh ◽  
S. A. Tarelkin ◽  
A. V. Chernykh ◽  
S. Yu. Troschiev ◽  
N. V. Luparev ◽  
...  
Keyword(s):  
Gas Phase ◽  
Charged Particles ◽  
Epitaxial Films ◽  
Heavy Charged Particles ◽  
Prototype Detector ◽  
Gas Phase Deposition

Compositional control and structural properties of ZnSe1-xTex epitaxial films on lattice- matched InGaAs/InP (001) by photoassisted Metal Organic Vapor Phase Expitaxy (MOVPE)

2004 ◽  
Vol 819 ◽  
Author(s):  
Bhanu Prakash Yarlagadda ◽  
Angel Rodriguez ◽  
Peng Li ◽  
John Ayers ◽  
Faquir Jain
Keyword(s):  
Gas Phase ◽  
Vapor Phase ◽  
Structural Data ◽  
Epitaxial Films ◽  
Lower Growth ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Compositional Control ◽  
Lattice Matched

AbstractWe report the growth of ZnSe1−xTex (x < 0.9) epitaxial layers using photoassisted Metal- Organic Vapor Phase Epitaxy (MOVPE) on lattice-matched InGaAs/InP (001) substrates. Ternary compositional control was studied as a function of the gas phase composition, growth temperature (360°C – 400°C) and irradiation (12 mW/cm2 – 48mW/cm2). Compositional and structural data were obtained by x-ray rocking curves from 004 and 044 reflections. Lower growth temperatures increased the relative tellurium incorporation but at the expense of the growth rate.

Gas-phase spectra of the radiative recombination of nitrogen atoms at helium temperatures

1978 ◽  
Vol 54 (2) ◽  
pp. 282-285 ◽  
Author(s):  
E.B. Gordon ◽  
L.P. Mezhov-Deglin ◽  
O.F. Pugachev ◽  
V.V. Khmelenko
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Phase Spectra

Iron K-Line Emission from X-Ray Binaries

1988 ◽  
Vol 102 ◽  
pp. 47-50
Author(s):  
K. Masai ◽  
S. Hayakawa ◽  
F. Nagase
Keyword(s):  
Accretion Disk ◽  
Radiative Recombination ◽  
Characteristic Temperature ◽  
Line Emission ◽  
Ionization Front ◽  
Continuum Radiation ◽  
X Ray ◽  
Low Mass ◽  
X Ray Binaries

AbstractEmission mechanisms of the iron Kα-lines in X-ray binaries are discussed in relation with the characteristic temperature Txof continuum radiation thereof. The 6.7 keV line is ascribed to radiative recombination followed by cascades in a corona of ∼ 100 eV formed above the accretion disk. This mechanism is attained for Tx≲ 10 keV as observed for low mass X-ray binaries. The 6.4 keV line observed for binary X-ray pulsars with Tx&gt; 10 keV is likely due to fluorescence outside the He II ionization front.

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Residual Gas Reactions in the Electron Microscope: I. Qualitative Observations on the Water Gas Reaction

1968 ◽  
Vol 26 ◽  
pp. 292-293
Author(s):  
Richard E. Hartman ◽  
Roberta S. Hartman ◽  
Peter L. Ramos
Keyword(s):  
Electron Beam ◽  
Electron Microscope ◽  
Gas Phase ◽  
Absolute Temperature ◽  
Residual Gas ◽  
Gas Reactions ◽  
Image Position ◽  
The Right ◽  
Water Gas ◽  
Thinning Rate

The action of water and the electron beam on organic specimens in the electron microscope results in the removal of oxidizable material (primarily hydrogen and carbon) by reactions similar to the water gas reaction .which has the form:The energy required to force the reaction to the right is supplied by the interaction of the electron beam with the specimen.The mass of water striking the specimen is given by:where u = gH2O/cm2 sec, PH2O = partial pressure of water in Torr, & T = absolute temperature of the gas phase. If it is assumed that mass is removed from the specimen by a reaction approximated by (1) and that the specimen is uniformly thinned by the reaction, then the thinning rate in A/ min iswhere x = thickness of the specimen in A, t = time in minutes, & E = efficiency (the fraction of the water striking the specimen which reacts with it).

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Integration of Core-Edge Spectroscopy Methods for the Study of Polymers

1996 ◽  
Vol 54 ◽  
pp. 154-155
Author(s):  
E. G. Rightor
Keyword(s):  
Excited State ◽  
Polymer Blends ◽  
Gas Phase ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Electronic States ◽  
Core Electron ◽  
Bulk Solids ◽  
Development Application

Core edge spectroscopy methods are versatile tools for investigating a wide variety of materials. They can be used to probe the electronic states of materials in bulk solids, on surfaces, or in the gas phase. This family of methods involves promoting an inner shell (core) electron to an excited state and recording either the primary excitation or secondary decay of the excited state. The techniques are complimentary and have different strengths and limitations for studying challenging aspects of materials. The need to identify components in polymers or polymer blends at high spatial resolution has driven development, application, and integration of results from several of these methods.

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