Characteristics of growth and radiative recombination of epitaxial layers InAsxP1?x(0

1990 ◽  
Vol 52 (1) ◽  
pp. 93-96
Author(s):  
V. A. Bykovskii ◽  
S. A. Manego ◽  
V. I. Osinskii
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Layers ◽  
Inp Substrates

An homogeneous growth model of gallium arsenide epitaxial layers from the gas phase

1989 ◽  
Vol 54 (11) ◽  
pp. 2933-2950
Author(s):  
Emerich Erdös ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Experimental Data ◽  
Gallium Arsenide ◽  
Kinetic Study ◽  
Gas Phase ◽  
Growth Model ◽  
Epitaxial Layers ◽  
Inhomogeneous Model ◽  
Homogeneous Models ◽  
Active Centres

This paper represents a continuation and ending of the kinetic study of the gallium arsenide formation, where a so-called inhomogeneous model is proposed and quantitatively formulated in five variants, in which two kinds of active centres appear. This model is compared both with the experimental data and with the previous sequence of homogeneous models.

Radiative recombination of InP and In1?xGaxP (0

1986 ◽  
Vol 44 (4) ◽  
pp. 378-380
Author(s):  
S. A. Manego ◽  
V. I. Osinskii ◽  
Yu. A. Gruzdev ◽  
O. Ya. Tikhonenko ◽  
T. O. Bud'ko
Keyword(s):  
Gas Phase ◽  
Radiative Recombination ◽  
Epitaxial Films

scholarly journals Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications

2003 ◽  
Vol 763 ◽  
Author(s):  
R. J. Kumar ◽  
R. J. Gutmann ◽  
J.M. Borrego ◽  
P. S. Dutta ◽  
C. A. Wang ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Radiative Recombination ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Recombination Coefficient ◽  
Epitaxial Layers ◽  
Capping Layer ◽  
One Dimensional ◽  
Recombination Velocity

AbstractRadio-frequency (RF) photoreflectance measurements and one-dimensional device simulations have been used to evaluate bulk recombination parameters and surface recombination velocity (SRV) in doubly-capped 0.55-eV p-InGaAsSb epitaxial layers, doped at 2 × 1017 cm-3, for thermophotovoltaic (TPV) applications. Bulk lifetimes of 90 to 100 ns and SRVs of 680 cm/s to 3200 cm/s (depending on the capping layer) are obtained, with higher doping and higher bandgap capping layers most effective in reducing SRV. RF photoreflectance measurements and one-dimensional device simulations are compatible with a radiative recombination coefficient (B) of 3 × 10-11 cm3/s and Auger coefficient (C) of 1 × 10-28 cm6/s.

Lattice defects in LPE InPInGaAsPInGaAs structure epitaxial layers on InP substrates

1982 ◽  
Vol 70 (1) ◽  
pp. 277-286 ◽  
Author(s):  
K. Ishida ◽  
Y. Matsumoto ◽  
K. Taguchi
Keyword(s):  
Lattice Defects ◽  
Epitaxial Layers ◽  
Inp Substrates

Reduction of threading dislocations in iso‐epitaxial layers grown on (001) InP substrates by misfit stresses

1981 ◽  
Vol 38 (10) ◽  
pp. 766-768 ◽  
Author(s):  
S. N. G. Chu ◽  
S. Mahajan ◽  
K. E. Strege ◽  
W. D. Johnston ◽  
A. A. Ballman
Keyword(s):  
Epitaxial Layers ◽  
Threading Dislocations ◽  
Inp Substrates

Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates

2006 ◽  
Vol 287 (2) ◽  
pp. 532-535
Author(s):  
T.S. Rao ◽  
M.G. So ◽  
W.Y. Jiang ◽  
T. Mayer ◽  
S. Roorda ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Epitaxial Layers ◽  
Inp Substrates
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