Grain growth in electric sheet during high-temperature annealing in different atmospheres

1974 ◽  
Vol 16 (7) ◽  
pp. 626-628 ◽  
Author(s):  
V. V. Sosnin ◽  
I. G. Yastrebov
Keyword(s):  
High Temperature ◽  
Grain Growth ◽  
High Temperature Annealing ◽  
Electric Sheet

Lateral grain growth in poly-Si films by gas flame high temperature annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
W. F. Qu ◽  
A. Kitagawa ◽  
Y. Masaki ◽  
M. Suzuki
Keyword(s):  
High Temperature ◽  
Tensile Stress ◽  
Compressive Stress ◽  
Grain Growth ◽  
Strain Energy ◽  
Driving Forces ◽  
Stress Distributions ◽  
High Temperature Annealing ◽  
Gas Flame ◽  
Si Films

AbstractPoly-Si films with the preferential orientation to a random, a (100) and a (110) texture were annealed using a flat gas flame. Remarkable lateral grain growth of (111) grains was observed for poly-Si films with a random and a (110) texture, while in (100) texture films the growth of (100) grains predominated over other grains. There existed tensile stress in as-prepared films. Grains with different orientation were under a different tensile stresses, and such stress distributions on the orientation of grains were different for different textures. The tensile stress was found to become larger in grown grains after high temperature annealing, while the stress on shrunken grains decreased or turned to compressive stress after annealing. These results indicate that strain energy stored in grains is one of the important driving forces in secondary grain growth.

Carbon concentration dependent grain growth of Cu2ZnSnS4 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (26) ◽  
pp. 20178-20185 ◽  
Author(s):  
Vincent Tiing Tiong ◽  
Yi Zhang ◽  
John Bell ◽  
Hongxia Wang
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Grain Growth ◽  
Carbon Concentration ◽  
High Temperature Annealing ◽  
Czts Nanocrystals

Influence of carbon on the grain growth of CZTS nanocrystals during high temperature annealing.

Improvement of the oxidation resistance of TiC-coated carbon black by high-temperature annealing in N2

RSC Advances ◽  
2016 ◽  
Vol 6 (30) ◽  
pp. 25601-25604
Author(s):  
Jianke Ye ◽  
Ke Bao ◽  
Yan Wen ◽  
Jiangtao Li
Keyword(s):  
Solid Solution ◽  
High Temperature ◽  
Carbon Black ◽  
Grain Growth ◽  
Oxidation Resistance ◽  
Carbon Oxidation ◽  
High Temperature Annealing ◽  
Coated Carbon

The annealing of TiC-coated carbon black in N2 at 1000–1300 °C resulted in formation of a TiCxNy solid solution and grain growth, which significantly increased the commencement and completion temperatures of carbon oxidation.

Pinning effect of Y2O3 network on copper grain growth during high temperature annealing

2018 ◽  
Vol 5 (5) ◽  
pp. 056520
Author(s):  
Fei Huang ◽  
Hang Wang ◽  
Bin Yang ◽  
Tao Liao ◽  
Zhaoyang Wang
Keyword(s):  
High Temperature ◽  
Grain Growth ◽  
High Temperature Annealing ◽  
Pinning Effect

Study of Grain Growth Kinetics in Submicrocrystalline Armco-Iron

2007 ◽  
Vol 550 ◽  
pp. 465-470 ◽  
Author(s):  
A.N. Aleshin ◽  
Alex M. Arsenkin ◽  
Sergey V. Dobatkin
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Low Temperature ◽  
Grain Growth ◽  
Growth Kinetics ◽  
Armco Iron ◽  
High Temperature Annealing ◽  
Grain Growth Kinetics ◽  
Submicrocrystalline Materials ◽  
Thermal Stability Of

The paper is devoted to the problem of thermal stability of ultra-fine grained (submicrocrystalline) materials prepared by severe plastic deformation. A basis of the paper lies in a fact that there is practically no grain growth in submicrocrystalline materials when annealing temperature is less than 0.35Tm. Reasons of high thermal stability of submicrocrystalline materials at low temperatures are widely discussed in literature. One of them is the affect of triple junction drag on grain boundaries motion. During annealing at a low temperature triple junction drag controls microstructure evolution in submicrocrystalline materials, and this phenomenon can be used to improve their thermal stability at high temperatures. The aim of this paper is to investigate grain growth kinetics in a two-step regime, low temperature and high temperature annealing. The experiments on grain growth were performed in submicrocrystalline Armco-iron fabricated by high pressure torsion. It is established that long-time low temperature pre-annealing reduces the grain growth rate in following high temperature annealing by a factor greater than two.

Effect of High Temperature Annealing on the Microstructure of SCS-6 SiC Fibers

1991 ◽  
Vol 250 ◽  
Author(s):  
X. J. Ning ◽  
P. Pirouz ◽  
R. T. Bhatt
Keyword(s):  
High Temperature ◽  
Grain Growth ◽  
Creep Resistance ◽  
Fiber Strength ◽  
Outer Part ◽  
Carbon Films ◽  
Argon Atmosphere ◽  
High Temperature Annealing ◽  
Sic Fibers ◽  
Sic Fiber

AbstractThe effect of annealing the SCS-6* SiC fiber for one hour at 2000°C in an argon atmosphere is reported. The SiC grains in the fiber coarsen appreciably and the intergranular carbon films segregate to the grain junctions. It would appear that grain growth in the outer part of the fiber is primarily responsible for the loss in fiber strength and improvement in fiber creep resistance.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

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