Carbon concentration dependent grain growth of Cu2ZnSnS4 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (26) ◽  
pp. 20178-20185 ◽  
Author(s):  
Vincent Tiing Tiong ◽  
Yi Zhang ◽  
John Bell ◽  
Hongxia Wang
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Grain Growth ◽  
Carbon Concentration ◽  
High Temperature Annealing ◽  
Czts Nanocrystals

Influence of carbon on the grain growth of CZTS nanocrystals during high temperature annealing.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Lateral grain growth in poly-Si films by gas flame high temperature annealing

1996 ◽  
Vol 441 ◽  
Author(s):  
W. F. Qu ◽  
A. Kitagawa ◽  
Y. Masaki ◽  
M. Suzuki
Keyword(s):  
High Temperature ◽  
Tensile Stress ◽  
Compressive Stress ◽  
Grain Growth ◽  
Strain Energy ◽  
Driving Forces ◽  
Stress Distributions ◽  
High Temperature Annealing ◽  
Gas Flame ◽  
Si Films

AbstractPoly-Si films with the preferential orientation to a random, a (100) and a (110) texture were annealed using a flat gas flame. Remarkable lateral grain growth of (111) grains was observed for poly-Si films with a random and a (110) texture, while in (100) texture films the growth of (100) grains predominated over other grains. There existed tensile stress in as-prepared films. Grains with different orientation were under a different tensile stresses, and such stress distributions on the orientation of grains were different for different textures. The tensile stress was found to become larger in grown grains after high temperature annealing, while the stress on shrunken grains decreased or turned to compressive stress after annealing. These results indicate that strain energy stored in grains is one of the important driving forces in secondary grain growth.

Intense ultraviolet photoluminescent emission from Yb doped ZnO thin films on Si after high temperature annealing

2017 ◽  
Vol 695 ◽  
pp. 2232-2237 ◽  
Author(s):  
C.L. Heng ◽  
T. Wang ◽  
W.Y. Su ◽  
H.C. Wu ◽  
M.C. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
Doped Zno

The Template Technique Applied to Epitaxial Growth of CrSi2 on Silicon (111)

1993 ◽  
Vol 317 ◽  
Author(s):  
John E. Manan ◽  
Robert G. Long ◽  
André Vantomme ◽  
Marc-A. Nicolet
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Film Formation ◽  
The Other ◽  
High Temperature Annealing ◽  
Growth Technique ◽  
Reactive Deposition ◽  
Chromium Evaporation

ABSTRACTThe template growth technique was applied to the growth of CrSi2 thin films on Si(111) by UHV E-gun evaporation. A 4He+ channeling yield of -50% was obtained for an epitaxial -2100 Å-thick film of continuous morphology grown at 450° C The heteroepitaxial relationship is CrSi2 (001) / Si (lll) with CrSi2[210] ∥ Si<110>.In the case of film formation simply via reactive deposition epitaxy (RDE, chromium evaporation onto hot substrates) a severe crystallinity-Morphology tradeoff is always observed. Continuous films are formed at low temperature but no long-range epitaxy is found. On the other hand, high temperature annealing of these films induces the formation of islands that show good epitaxial alignment with the substrate. This tradeoff was addressed with the template growth technique.

scholarly journals Strong near band edge emission of (Ce, Yb) co-doped ZnO thin films after high temperature annealing

2017 ◽  
Vol 7 (8) ◽  
pp. 3041 ◽  
Author(s):  
C. L. Heng ◽  
W. Xiang ◽  
W. Y. Su ◽  
H. C. Wu ◽  
Y. K. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Band Edge ◽  
Zno Thin Films ◽  
Near Band Edge ◽  
Band Edge Emission ◽  
High Temperature Annealing ◽  
Edge Emission ◽  
Doped Zno ◽  
Co Doped
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