Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4

1988 ◽  
Vol 47 (4) ◽  
pp. 319-325 ◽  
Author(s):  
Yong Feng Lu ◽  
M. Takai ◽  
S. Nagatomo ◽  
S. Namba
Keyword(s):  
Laser Irradiation ◽  
Chemical Etching ◽  
Zn Ferrite ◽  
Wet Chemical ◽  
Wet Chemical Etching

Laser Induced Wet-Chemical Etching of Mn-Zn Ferrite in H3PO4

1988 ◽  
Vol 129 ◽  
Author(s):  
Yong Feng Lu ◽  
Mikio Takai ◽  
Syohei Nagatomo ◽  
Susumu Namba
Keyword(s):  
Aqueous Solution ◽  
Laser Power ◽  
Chemical Etching ◽  
Local Surface ◽  
Aspect Ratios ◽  
High Laser ◽  
Zn Ferrite ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Power Region

ABSTRACTMaskless etching of single crystalline Mn-Zn ferrite in an H3PO4 aqueous solution by Ar+ laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in a low laser power region and thermochemical in a high laser power region. High etching rates of up to 340 pm/s and an aspect-ratio of 50 for slab structures have been achieved. Periodic ripple structures have been observed under specific etching conditions due to the local surface melting.

Decapsulation Techniques for Cu Wire Bonding Package

2009 ◽  
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon
Keyword(s):  
Laser Ablation ◽  
Thin Layer ◽  
Chemical Etching ◽  
Wire Bonding ◽  
Methods And Techniques ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Reliability Issue ◽  
Etch Time ◽  
Device Technology

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.

scholarly journals Controlling the Facet of ZnO during Wet Chemical Etching Its (0001) O‐Terminated Surface

Small ◽  
2020 ◽  
Vol 16 (51) ◽  
pp. 2007045
Author(s):  
Mei Sun ◽  
Bocheng Yu ◽  
Mengyu Hong ◽  
Zhiwei Li ◽  
Fengjiao Lyu ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals In Situ Study of the Wet Chemical Etching of SiO2 and Nanoparticle@SiO2 Core–Shell Nanospheres

2021 ◽  
Author(s):  
Albert Grau-Carbonell ◽  
Sina Sadighikia ◽  
Tom A. J. Welling ◽  
Relinde J. A. van Dijk-Moes ◽  
Ramakrishna Kotni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Core Shell ◽  
In Situ Study ◽  
Wet Chemical ◽  
Wet Chemical Etching

Controllable end shape modification of ZnO nano-arrays/rods by a simple wet chemical etching technique

2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Shape Modification ◽  
Etching Technique ◽  
Wet Chemical ◽  
Wet Chemical Etching

NOHSO4/HF – A Novel Etching System for Crystalline Silicon

2007 ◽  
Vol 62 (11) ◽  
pp. 1411-1421 ◽  
Author(s):  
Sebastian Patzig ◽  
Gerhard Roewer ◽  
Edwin Kroke ◽  
Ingo över
Keyword(s):  
Gas Phase ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Etching Solution ◽  
Wide Range ◽  
Ft Ir ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching System

Solutions consisting of HF - NOHSO4 - H2SO4 exhibit a strong reactivity towards crystalline silicon which is controlled by the concentrations of the reactive species HF and NO+. Selective isotropic and anisotropic wet chemical etching with these solutions allows to generate a wide range of silicon surface morphology patterns. Traces of Ag+ ions stimulate the reactivity and lead to the formation of planarized (polished) silicon surfaces. Analyses of the silicon surface, the etching solution and the gas phase were performed with scanning electron microscopy (SEM), DR/FT-IR (diffusive reflection Fourier transform infra-red), FT-IR, Raman and NMR spectroscopy, respectively. It was found that the resulting silicon surface is hydrogen-terminated. The gas phase contains predominantly SiF4, NO and N2O. Furthermore, NH4+ is produced in solution. The study has confirmed the crucial role of nitrosyl ions for isotropic wet chemical etching processes. The novel etching system is proposed as an effective new way for selective surface texturing of multi- and monocrystalline silicon. A high etching bath service lifetime, besides a low contamination of the etching solution with reaction products, provides ecological and economical advantages for the semiconductor and solar industry.

Fabrication of ultrafine gratings on GaAs by electron beam lithography and two‐step wet chemical etching

1990 ◽  
Vol 57 (12) ◽  
pp. 1212-1214 ◽  
Author(s):  
T. Katoh ◽  
Y. Nagamune ◽  
G. P. Li ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Robust Process Design towards through-Silicon via Quality Improvement Based on Grey-Taguchi Method

2012 ◽  
Vol 217-219 ◽  
pp. 2183-2186
Author(s):  
Chao Wei Tang ◽  
Li Chang Chuang ◽  
Hong Tsu Young ◽  
Mike Yang ◽  
Hsueh Chuan Liao
Keyword(s):  
Taguchi Method ◽  
Grey Relational Analysis ◽  
Chemical Etching ◽  
Through Silicon Via ◽  
Relational Analysis ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Etching Parameters ◽  
Grey Relational ◽  
Grey Taguchi

The robust design of chemical etching parameters is dealing with the optimization of the through-silicon via (TSV) roundness error and TSV lateral etching depth in the etching of silicon for laser drilled TSVs. The considered wet chemical etching parameters comprise the HNO3 molarity, HF molarity, and etching time. Grey-Taguchi method is combining the orthogonal array design of experiments with Grey relational analysis (GRA), which enables the determination of the optimal combination of wet chemical etching parameters for multiple process responses. The concept of Grey relational analysis is to find a Grey relational grade, which can be used for the optimization conversion from a multiple objective case to a single objective case. Also, GRG is used to investigate the parameter effects to the overall quality targets.

scholarly journals The Art of Tungsten Etching in Semiconductor Chips

1999 ◽  
Vol 7 (2) ◽  
pp. 24-25
Author(s):  
Lisa Litz-Montanaro
Keyword(s):  
Manufacturing Process ◽  
Chemical Etching ◽  
Layer By Layer ◽  
Ion Milling ◽  
Etching Technique ◽  
Semiconductor Structures ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Semiconductor Chips ◽  
Complex Semiconductor

In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semiconductor changes. While there are many tools that assist in these analytical pursuits, such as RIE (reactive ion etching - a dry etching technique), ion milling, and microcleaving, the wet chemical etching of tungsten is sometimes more reproducible than RIE techniques.

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