Reaction of nitron fibre with nickel during the chemical metallization process

1988 ◽  
Vol 19 (5) ◽  
pp. 316-319
Author(s):  
D. N. Akbarov ◽  
L. A. Samoilova ◽  
T. N. Ovchinnikova
Keyword(s):  
Nitron Fibre ◽  
Chemical Metallization ◽  
Metallization Process

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

Two-dimensional numerical simulations of electrothermal behaviour in very large scale integrated contacts and vias

1989 ◽  
Vol 67 (4) ◽  
pp. 212-217 ◽  
Author(s):  
W. Allegretto ◽  
A. Nathan ◽  
K. Chau ◽  
H. P. Baltes
Keyword(s):  
Electrical Conductivity ◽  
Joule Heating ◽  
Large Scale ◽  
Two Dimensional ◽  
Dimensional Model ◽  
Heating Effects ◽  
Two Dimensional Model ◽  
Potential Gradients ◽  
Metallization Process ◽  
Temperature Equation

We present results of electrothermal interactions in fine geometry contacts and vias. The results have been obtained using a two-dimensional model based on the finite-box procedure. For the contact geometry, large electric potential gradients and consequently high Joule-heating effects develop at the interface, which is relatively low in electrical conductivity. In the case of the via, however, temperature escalations result from singularities in the electric field at geometrically imperfect locations, owing to inadequate step coverage in the metallization process. In particular, we discuss the treatment of boundary conditions for the temperature equation.

Computer‐aided selective production of low-resistance NiP and NiCuP layers

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Piotr Kowalik ◽  
Edyta Wróbel
Keyword(s):  
Low Temperature ◽  
Computer Program ◽  
Design Methodology ◽  
Surface Resistance ◽  
Temperature Coefficient Of Resistance ◽  
Ceramic Substrates ◽  
Content Type ◽  
Computer Aided ◽  
Chemical Metallization

Purpose This paper aims to present the possibility of computer-aided technology of chemical metallization for the production of electrodes and resistors based on Ni-P and Ni-Cu-P layers. Design/methodology/approach Based on the calculated parameters of the process, test structures were made on an alumina substrate using the selective metallization method. Dependences of the surface resistance on the metallization time were made. These dependencies take into account the comparison of the calculations with the performed experiment. Findings The author created a convenient and easy-to-use tool for calculating basic Ni-P and Ni-Cu-P layer parameters, namely, surface resistance and temperature coefficient of resistance (TCR) of test resistor, based on chemical metallization parameters. The values are calculated for a given level of surface resistance of Ni-P and Ni-Cu-P layer and defined required range of changes of TCR of test resistor. The calculations are possible for surface resistance values in the range of 0.4 Ohm/square ÷ 2.5 Ohm/square. As a result of the experiment, surface resistances were obtained that practically coincide with the calculations made with the use of the program created by the authors. The quality of the structures made is very good. Originality/value To the best of the authors’ knowledge, the paper presents a new, unpublished method of manufacturing electrodes (resistors) on silicon, Al2O3 and low temperature co-fired ceramic substrates based on the authors developed computer program.

BCB-Based Dry Film low k Permanent Polymer with sub 4-μm Vias for Advanced WLP and FO-WLP Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000079-000085 ◽  
Author(s):  
Michael Toepper ◽  
Tanja Braun ◽  
Robert Gernhardt ◽  
Martin Wilke ◽  
Piotr Mackowiak ◽  
...  
Keyword(s):  
Laser Scanning ◽  
New Technology ◽  
Side Wall ◽  
Wafer Level ◽  
Major Barrier ◽  
Wafer Level Packaging ◽  
And Performance ◽  
Low K ◽  
Metallization Process ◽  
Dry Film

There is a strong demand to increase the routing density of the RDL to match the requirements for future microelectronic systems which are mainly miniaturization and performance. Photo-resists for structuring the metallization or acting as a mold for electroplating are common for very fine lines and spaces due to the developments in the front-end processing. For example chemical amplified Photo-resists are now moving in the back-end and wafer level packaging process. The results are mainly governed by the performance of the equipment i.e. the photo-tool. This is different for the permanent dielectric polymer material. The major difference in photo-resists and dielectric photo-polymer are the different functions of the material systems. Photo-resists are only temporary masks for subsequent process steps like etching and plating. This is different for the photo-polymers which are a permanent part of the future systems. In this paper a new technology is discussed which uses a laser scanning ablation process and BCB-Based Dry Film low k Permanent Polymer. Laser ablation of polymers is in principle not a new technology. Low speed and high cost was the major barrier. But the combination of a scanning technology together with quartz masks has opened this technology to overcome the limitation of the current photo-polymer process. The new technology is described in detail and the results of structuring BCB-Based Films down to less than 4 μm via diameter in a 15 μm thick film has been shown. The via side wall can be controlled by the fluence of the laser pulse. Test structures have been designed and fabricated to demonstrate the excellent electrical resistivity of the vias using a two-layer metallization process.

scholarly journals Laser versus LED polymerization: Comparison of in vitro preventive sealing procedures

2019 ◽  
Vol 17 (1) ◽  
pp. 228080001881601
Author(s):  
Filiberto Mastrangelo ◽  
Isabella Perraro ◽  
Sabrina Mattia ◽  
Giuseppe Troiano ◽  
Khrystyna Zhurakivska ◽  
...  
Keyword(s):  
Laser Diode ◽  
Tooth Enamel ◽  
In Vitro Study ◽  
Third Molars ◽  
Fissure Sealant ◽  
Microscopic Evaluation ◽  
Group A ◽  
Group B ◽  
Metallization Process

Introduction: The technique of sealing is a widely accepted procedure for prevention of caries. The aim of our in vitro study was to compare the effect of two different curing units (traditional LED source and innovative laser diode lamp) on the integrity of fissure sealant material and its interface with tooth enamel. Materials and methods: Sixty healthy third molars were randomly assigned to two groups. In group A were teeth intended for polymerization by LED B lamp, and group B comprised teeth to be polymerized by an innovative laser diode. Both groups were treated with the traditional sealing technique, subjected to a metallization process, and analyzed by scanning electron microscope. Results: Micro-gaps between the sealant and the enamel were found in specimens in both A (43%) and B (40%) groups ( p=0.793), and sealant shrinkage was seen. Significant differences between the groups emerged in the percentage of perimetric micro-erosion sites (80% vs. 100%, p=0.010) and the presence of holes and micro-bubbles on the sealant surface (21% vs. 63%, p=0.001). Conclusions: Although macroscopic clinical polymerization occurred with both instruments, the microscopic evaluation showed significant differences between the studied groups in terms of perimetric micro-erosion sites and micro-bubbles, which were higher in laser-cured samples.

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