Plasma etching as a diagnostic technique in silicon surface studies

1977 ◽  
Vol 12 (5) ◽  
pp. 1019-1027 ◽  
Author(s):  
D. P. Griffiths ◽  
S. H. Bradley
Keyword(s):  
Plasma Etching ◽  
Silicon Surface ◽  
Diagnostic Technique ◽  
Surface Studies

Rie-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves

1986 ◽  
Vol 68 ◽  
Author(s):  
Patrice Geraghty ◽  
W. Lee Smith
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Thermal Wave ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Thermal Waves ◽  
Process Variables ◽  
Crystal Silicon ◽  
Laser Probe ◽  
Damage Level

AbstractA method is presented to nondestructively monitor damage in silicon caused by reactive-ion or plasma etching on actual product wafers or test wafers immediately following the etch step.Data is taken on product wafers by scanning the 1-micron laser probe spot across and along the bottom of RIE-etched trenches.The onset of silicon damage brings a marked increase to the thermal wave (TW) signal: as the RIE bias voltage was increased from -60 volts to -250 volts, the TW signal increased monotonically by 1230%.The effects of other RIE process parameters on the damage level were also measured.This study allowed the RIE process variables to be adjusted to minimize damage to the silicon surface.

Damage Induced by Electron Cyclotron Resonance Plasma Etching on Silicon Surface

1991 ◽  
Vol 30 (Part 1, No. 5) ◽  
pp. 1045-1049 ◽  
Author(s):  
Gen Washidzu ◽  
Tohru Hara ◽  
Jun Hiyoshi ◽  
Masami Sasaki ◽  
Yasuhiro Suzuki ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma

Silicon surface studies by means of proton backscattering and proton induced X-Ray emission

1973 ◽  
Vol 17 (3-4) ◽  
pp. 245-252 ◽  
Author(s):  
W. F. Van Der Weg ◽  
W. H. Kool ◽  
H. E. Roosendaal ◽  
F. W. Saris
Keyword(s):  
Silicon Surface ◽  
Surface Studies ◽  
X Ray

Removal of Plasma-Induced Physical Damage Formed in Nanoscale Three-Dimensional FinFETs

NANO ◽  
2017 ◽  
Vol 12 (08) ◽  
pp. 1750099
Author(s):  
Junho Yoon ◽  
Jeongyun Lee ◽  
Won Jong Yoo
Keyword(s):  
Plasma Etching ◽  
Silicon Surface ◽  
Defect Density ◽  
Three Dimensional ◽  
Surface Damage ◽  
Si Substrate ◽  
Physical Damage ◽  
Ion Energy ◽  
Interface Defect ◽  
Order Of Magnitude

During plasma etching for fin patterning in the three-dimensional (3D) FinFET structure, the exposure of the Si surface to plasma with reactive ions can induce physical damages, resulting in the degradation of electrical properties of the device. In this study, we evaluated the damage with a measurable value by simulation and surface damage analyses using HR-TEM and RBS. As a result, the degree of the damaged layer was strongly dependent on the energy of the ions bombarding the Si substrate during plasma etching. The damage was quantified with the interface defect density measured by the charge pumping method. Plasma etching with high ion energy showed approximately one order of magnitude higher defect density than that with low ion energy and/or wet etching with no ion bombardment. We introduced Si soft treatment (with very low ion energy) to remove the damaged layer. The Si soft treatment was very effective to remove the damage on a highly damaged silicon surface. However, the Si soft treatment itself increased the number of defects for a low damage silicon surface.

Surface Studies Relevant to the Initial Stages of Diamond Nucleation

1994 ◽  
Vol 339 ◽  
Author(s):  
J. M. Lannon ◽  
J. S. Gold ◽  
C. D. Stinespring
Keyword(s):  
Silicon Surface ◽  
Reaction Channel ◽  
Surface Species ◽  
Growth Processes ◽  
Surface Studies ◽  
Diamond Nucleation ◽  
Clean Silicon Surface

ABSTRACTStudies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed and to determine the effect of an O-adlayer on enhancing or selecting the reaction channel which leads to these species. Under appropriate conditions, the interaction between C2H4 and the clean silicon surface yields both SiC and C-C species. The presence of an O-adlayer significantly reduces the activity of silicon and enhances the formation of sp2 and sp3 C-C species. These results provide key insights into diamond nucleation conditions in conventional growth processes.

Effect of Ion Bombardment on the Dopant Diffusion During Reactive Ion Etching (RIE) of Dielectric Films Deposited on Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
K. Shenai ◽  
N. Lewis ◽  
C. A. Smith ◽  
B. J. Baliga
Keyword(s):  
Plasma Etching ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Ion Etching ◽  
Etched Silicon ◽  
Doping Profiles

ABSTRACTWe report on the results obtained from a study conducted to understand the effect of reactive ion etching (RIE) of oxide films on the dopant diffusion in ion-implanted silicon. Thermally grown oxide films on silicon were plasma etched in a CHF3/CO2 plasma. The residual silicon surface damage created during plasma etching was removed by employing a low ion-bombardment, two-step surface plasma cleaning process. The samples with oxide films etched in a wet chemical etchant provided the control for evaluating the effect of the RIE process. The samples were implanted with boron and boron was activated under various conditions to form p-n junctions to obtain a range of boron doping profiles and junction depths. Some boron doped samples were implanted with arsenic to form a heavily doped n+ region at the silicon surface. The resulting doping profiles were analysed using spreading resistance profiling (SRP), four-point probe measurements, and secondary ion-mass spectrometry (SIMS) to understand the activation, diffusion, and precipitation of various dopants. Detailed transmission electron microscopy (TEM) analysis was used to study the microstructural effects. It was observed that plasma etching of the oxide films prior to the formation of boron diffused surface regions in silicon resulted in significant changes in boron diffusion. For low boron implant doses, plasma etched silicon surfaces resulted in retarded boron diffusion. For high boron implant doses, plasma etched silicon surfaces lead to enhanced boron diffusion.

Sign in / Sign up

Export Citation Format

Share Document