On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

1999 ◽  
Vol 86 (4) ◽  
pp. 1822-1833 ◽  
Author(s):  
K. H. A. Bogart ◽  
V. M. Donnelly
Keyword(s):  
Surface Layer ◽  
Plasma Etching ◽  
Silicon Surface ◽  
Constant Composition

Activity coefficients, densities, dipole moments, and surface tensions of the system triethylamine–methylethylketone–water

1981 ◽  
Vol 59 (1) ◽  
pp. 127-131 ◽  
Author(s):  
Alan N. Campbell
Keyword(s):  
Surface Layer ◽  
Dipole Moments ◽  
Phase System ◽  
Constant Composition ◽  
Two Phase ◽  
Three Phase ◽  
Wide Range ◽  
Isothermal System ◽  
Total Composition ◽  
Two Phases

The properties named in the title have been determined by standard methods. Viscosity, molar volume, and orientation polarisation all indicate abnormalities of the nature of association between the components.The most interesting result is that of surface tension which indicates that, in the case of the binary system triethylamine–water, a surface layer of constant composition is formed over a wide range of total composition. When, by a rise in temperature of two or three degrees, this layer becomes unstable, it splits into two phases of different composition. The surface layer may then be instantaneously reformed and so on. A mechanism for the generation of a two-phase system is thus established. The data for the three-phase, isothermal, system are not so convincing, for reasons that are suggested.

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

2004 ◽  
Vol 10 (1) ◽  
pp. 134-138 ◽  
Author(s):  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
Miyoko Tanaka ◽  
Kazuo Furuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Plan View ◽  
Palladium Clusters ◽  
Transmission Electron ◽  
Pd Clusters

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

2001 ◽  
Vol 35 (9) ◽  
pp. 1022-1029 ◽  
Author(s):  
A. V. Zverev ◽  
I. G. Neizvestnyi ◽  
N. L. Shvarts ◽  
Z. Sh. Yanovitskaya
Keyword(s):  
Surface Layer ◽  
Silicon Surface

scholarly journals Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

2020 ◽  
Vol 46 (24) ◽  
pp. 37
Author(s):  
Д.А. Кудряшов ◽  
А.С. Гудовских ◽  
А.А. Максимова ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
...  
Keyword(s):  
Surface Layer ◽  
Magnetron Sputtering ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Near Surface ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Degree Of Damage ◽  
P Type

The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

Rie-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves

1986 ◽  
Vol 68 ◽  
Author(s):  
Patrice Geraghty ◽  
W. Lee Smith
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Thermal Wave ◽  
Silicon Surface ◽  
Single Crystal Silicon ◽  
Thermal Waves ◽  
Process Variables ◽  
Crystal Silicon ◽  
Laser Probe ◽  
Damage Level

AbstractA method is presented to nondestructively monitor damage in silicon caused by reactive-ion or plasma etching on actual product wafers or test wafers immediately following the etch step.Data is taken on product wafers by scanning the 1-micron laser probe spot across and along the bottom of RIE-etched trenches.The onset of silicon damage brings a marked increase to the thermal wave (TW) signal: as the RIE bias voltage was increased from -60 volts to -250 volts, the TW signal increased monotonically by 1230%.The effects of other RIE process parameters on the damage level were also measured.This study allowed the RIE process variables to be adjusted to minimize damage to the silicon surface.

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