Enhanced disordering of GaAs/AIGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition

1994 ◽  
Vol 13 (5) ◽  
pp. 326-328 ◽  
Author(s):  
W. J. Choi ◽  
J. I. Lee ◽  
I. K. Han ◽  
K. N. Kang ◽  
Y. Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multiple Quantum Well ◽  
Chemical Vapour ◽  
Multiple Quantum ◽  
Rf Power ◽  
Capping Layer

Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing

1996 ◽  
Vol 421 ◽  
Author(s):  
D.K. Sengupta ◽  
W. Fang ◽  
J.I. Malin ◽  
H.C. Kuo ◽  
T. Horton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Intersubband Absorption ◽  
Photoresponse Spectrum ◽  
Performance Results

AbstractA shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

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