Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing

1996 ◽  
Vol 421 ◽  
Author(s):  
D.K. Sengupta ◽  
W. Fang ◽  
J.I. Malin ◽  
H.C. Kuo ◽  
T. Horton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Intersubband Absorption ◽  
Photoresponse Spectrum ◽  
Performance Results

AbstractA shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure

1996 ◽  
Vol 68 (20) ◽  
pp. 2846-2848 ◽  
Author(s):  
T. R. Schimert ◽  
S. L. Barnes ◽  
A. J. Brouns ◽  
F. C. Case ◽  
P. Mitra ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Grating Structure

Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

2003 ◽  
Vol 82 (1) ◽  
pp. 37-39 ◽  
Author(s):  
K. Ohtani ◽  
N. Matsumoto ◽  
H. Sakuma ◽  
H. Ohno
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Intersubband Absorption

scholarly journals Thermal Interdiffusion in InGaAs/GaAs Strained Multiple Quantum Well Infrared Photodetector

1997 ◽  
Vol 484 ◽  
Author(s):  
Alex S. W. Lee ◽  
E. Herbert Li ◽  
Gamani Karunasiri
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Annealing Process ◽  
Multiple Quantum ◽  
Optical And Electrical Properties ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Order Of Magnitude ◽  
Band Mixing

AbstractRTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and electrical properties of strained InGaAs/GaAs quantum well infrared photodetector. Photoluminescence measurement at 4.5 K shows that no strain relaxation or misfit dislocation formation occurs throughout the annealing process. Absorption and responsivity peak wavelengths are red shifted continuously without appreciable degradation in absorption strength. The normal incident absorption, which is believed to be the result of band-mixing effects induced by the coupling between the conduction and valence and is usually forbidden in conventional polarization selection rule, is preserved after interdiffusion. Responsivity spectra of both 0° and 90° polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is not very sensitive to temperature variation and is found to be an order of magnitude larger than the as-grown one at 77K.

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