Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

1995 ◽  
Vol 14 (20) ◽  
pp. 1433-1435 ◽  
Author(s):  
W. J. Choi ◽  
S. Lee ◽  
Y. Kim ◽  
S. K. Kim ◽  
J. I. Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Chemical Vapour ◽  
Multiple Quantum ◽  
Capping Layer

Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap quantum well disordering

1997 ◽  
Vol 484 ◽  
Author(s):  
W. J. Choi ◽  
S. M. Han ◽  
S. I. Shah ◽  
S. G. Choi ◽  
D. H. Woo ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Quantum Well ◽  
Flow Rate ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Multiple Quantum ◽  
Capping Layer

AbstractDielectric cap quantum well disordering (DCQWD) of GaAs/AlGaAs multiple quantum well (MQW) structure was carried out by using SiNx. capping layer grown by plasma enhanced chemical vapor deposition (PECVD). By varying the NH3 flow rate with fixed SiH4 flow rate during the SiNx. growth, the characteristics of the capping film were varied. There was an increase in the energy shift of quantum well photoluminescence (PL) peak after thermal treatment of the samples with rapid thermal annealing (RTA) as the NH3 flow rate was increased, although the thickness of SiNx decreased. This is thought to be due to the increase of hydrogen content in SiNx. film grown at higher NH3 flow rate.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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