Near surface modification of silica structure induced by chemical/mechanical polishing

1994 ◽  
Vol 29 (17) ◽  
pp. 4554-4558 ◽  
Author(s):  
J. A. Trogolo ◽  
K. Rajan
Keyword(s):  
Surface Modification ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Near Surface

scholarly journals Evaluation of Chemical Mechanical Polishing-Based Surface Modification on 3D Dental Implants Compared to Alternative Methods

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2286 ◽  
Author(s):  
Riaid Alsaeedi ◽  
Z. Ozdemir
Keyword(s):  
Surface Modification ◽  
Surface Chemistry ◽  
Dental Implants ◽  
Chemical Mechanical Polishing ◽  
Mechanical Performance ◽  
Roughness Parameter ◽  
Mechanical Polishing ◽  
Alternative Methods ◽  
Implant Surface ◽  
Pull Out

Chemical mechanical polishing (CMP) has been introduced in previous studies as a synergistic technique to modify the surface chemistry and topography of titanium-based implants to control their biocompatibility. In this study, the effectiveness of CMP implementation on titanium-based implant surface modification was compared to machined implants, such as baseline and etching and biphasic calcium phosphate (BCP) particle-based sand blasting treatments, in terms of the surface chemical and mechanical performance. Initially, a lab-scale 3D CMP technique was developed and optimized on commercial dental implant samples. The mechanical competitiveness of the dental implants treated with the selected methods was examined with the Vickers microhardness test as well as pull-out force and removal torque force measurements. Furthermore, the surface structures were quantified through evaluation of the arithmetic mean roughness parameter (Ra). Subsequently, the surface chemistry changes on the treated implants were studied as wettability by contact angle measurement, and surface passivation was evaluated through electrochemical methods. In each evaluation, the CMP treated samples were observed to perform equal or better than the baseline machined implants as well as the current method of choice, the BCP treatment. The ability to control the surface topography and chemistry simultaneously by the use of CMP technique is believed to be the motivation for its adaptation for the modification of implant surfaces in the near future.

scholarly journals Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

2021 ◽  
Vol 11 (10) ◽  
pp. 4358
Author(s):  
Hanchul Cho ◽  
Taekyung Lee ◽  
Doyeon Kim ◽  
Hyoungjae Kim
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Shape Error ◽  
Profile Shape ◽  
Conditioning Process ◽  
Polishing Pad ◽  
Simulation Based ◽  
Diamond Conditioner ◽  
Pad Conditioning ◽  
Good Agreement

The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures. In particular, the uniformity of the polishing pad corresponding to the tool directly affects the polishing uniformity and wafer shape. In this study, the profile shape of a CMP pad was predicted through a kinematic simulation based on the trajectory density of the diamond abrasives of the diamond conditioner disc. The kinematic prediction was found to be in good agreement with the experimentally measured pad profile shape. Based on this, the shape error of the pad could be maintained within 10 μm even after performing the pad conditioning process for more than 2 h, through the overhang of the conditioner.

scholarly journals Non-spherical abrasives with ordered mesoporous structures for chemical mechanical polishing

2021 ◽  
Author(s):  
Peili Gao ◽  
Tingting Liu ◽  
Zhenyu Zhang ◽  
Fanning Meng ◽  
Run-Ping Ye ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Ordered Mesoporous ◽  
Mesoporous Structures

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Effects of Slurry pH on Chemical and Mechanical Actions during Chemical Mechanical Polishing of YAG

2021 ◽  
pp. 150359
Author(s):  
Qing Mu ◽  
Zhuji Jin ◽  
Xiaolong Han ◽  
Ying Yan ◽  
Zili Zhang ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing
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