Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM

1995 ◽  
Vol 353 (5-8) ◽  
pp. 734-739 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
W. Grill ◽  
B. Heinz ◽  
A. R�seler ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ft Ir ◽  
Thin Silicon ◽  
Nitride Layers

Change of surface structure of thin silicon nitride layers during electron beam rapid thermal annealing

1994 ◽  
Vol 64 (20) ◽  
pp. 2652-2654 ◽  
Author(s):  
A. Markwitz ◽  
H. Baumann ◽  
E. F. Krimmel ◽  
K. Bethge ◽  
W. Grill
Keyword(s):  
Electron Beam ◽  
Silicon Nitride ◽  
Surface Structure ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Silicon ◽  
Nitride Layers

scholarly journals The Combination of Direct and Confined Laser Ablation Mechanisms for the Selective Structuring of Thin Silicon Nitride Layers

2014 ◽  
Vol 56 ◽  
pp. 998-1006 ◽  
Author(s):  
Stephan Rapp ◽  
Gerrit Heinrich ◽  
Matthias Domke ◽  
Heinz P. Huber
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Thin Silicon ◽  
Nitride Layers

Properties investigation of thin silicon nitride layers synthesized by ion implantation

1978 ◽  
Vol 39 (3-4) ◽  
pp. 163-167 ◽  
Author(s):  
F. F. Komarov ◽  
I. A. Rogalevich ◽  
V. S. Tishkov
Keyword(s):  
Silicon Nitride ◽  
Ion Implantation ◽  
Thin Silicon ◽  
Nitride Layers

Formation of thin silicon nitride layers on Si by low energy N2+ ion bombardment

1999 ◽  
Vol 147 (1-4) ◽  
pp. 316-319 ◽  
Author(s):  
V.I. Bachurin ◽  
A.B. Churilov ◽  
E.V. Potapov ◽  
V.K. Smirnov ◽  
V.V. Makarov ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Bombardment ◽  
Low Energy ◽  
Thin Silicon ◽  
Nitride Layers

scholarly journals Silicon Nitride Interface Engineering for Fermi Level Depinning and Realization of Dopant-Free MOSFETs

Micro ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 228-241
Author(s):  
Benjamin Richstein ◽  
Lena Hellmich ◽  
Joachim Knoch
Keyword(s):  
Silicon Nitride ◽  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Nitride Layer ◽  
Interface Engineering ◽  
Fermi Level Pinning ◽  
Thin Silicon ◽  
Thermal Nitridation ◽  
Nitride Layers

Problems with doping in nanoscale devices or low temperature applications are widely known. Our approach to replace the degenerate doping in source/drain (S/D)-contacts is silicon nitride interface engineering. We measured Schottky diodes and MOSFETs with very thin silicon nitride layers in between silicon and metal. Al/SiN/p-Si diodes show Fermi level depinning with increasing SiN thickness. The diode fabricated with rapid thermal nitridation at 900 ∘C reaches the theoretical value of the Schottky barrier to the conduction band ΦSB,n=0.2 eV. As a result, the contact resistivity decreases and the ambipolar behavior can be suppressed. Schottky barrier MOSFETs with depinned S/D-contacts consisting of a thin silicon nitride layer and contact metals with different work functions are fabricated to demonstrate unipolar behavior. We presented n-type behavior with Al and p-type behavior with Co on samples which only distinguish by the contact metal. Thus, the thermally grown SiN layers are a useful method suppress Fermi level pinning and enable reconfigurable contacts by choosing an appropriate metal.

ChemInform Abstract: VERY THIN SILICON NITRIDE FILMS GROWN BY DIRECT THERMAL REACTION WITH NITROGEN

1978 ◽  
Vol 9 (28) ◽  
Author(s):  
T. ITO ◽  
S. HIJIYA ◽  
T. NOZAKI ◽  
H. ARAKAWA ◽  
M. SHINODA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Thermal Reaction ◽  
Silicon Nitride Films ◽  
Thin Silicon

Kinetics of silicon nitride crystallization in N+-implanted silicon

1989 ◽  
Vol 4 (2) ◽  
pp. 394-398 ◽  
Author(s):  
V. S. Kaushik ◽  
A. K. Datye ◽  
D. L. Kendall ◽  
B. Martinez-Tovar ◽  
D. S. Simons ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Wafer Surface ◽  
Amorphous Silicon Nitride ◽  
Silicon Lattice ◽  
Nitrogen Ions ◽  
The Mean ◽  
Nitride Layers ◽  
Kinetics Of

Implantation of nitrogen at 150 KeV and a dose of 1 ⊠ 1018/cm2 into (110) silicon results in the formation of an amorphized layer at the mean ion range, and a deeper tail of nitrogen ions. Annealing studies show that the amorphized layer recrystallizes into a continuous polycrystalline Si3N4 layer after annealing for 1 h at 1200 °C. In contrast, the deeper nitrogen fraction forms discrete precipitates (located 1μm below the wafer surface) in less than 1 min at this temperature. The arcal density of these precipitates is 5 ⊠ 107/cm2 compared with a nuclei density of 1.6 ⊠ 105/cm2 in the amorphized layer at comparable annealing times. These data suggest that the nucleation step limits the recrystallization rate of amorphous silicon nitride to form continuous buried nitride layers. The nitrogen located within the damaged crystalline silicon lattice precipitates very rapidly, yielding semicoherent crystallites of β–Si3N4.

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