RFA as control method of the reactive sputtering process of TiN films

1995 ◽  
Vol 353 (5-8) ◽  
pp. 536-540 ◽  
Author(s):  
T. Stobiecki ◽  
F. Stobiecki ◽  
T. Conradi ◽  
S. Kraegermann ◽  
K. R�ll ◽  
...  
Keyword(s):  
Control Method ◽  
Reactive Sputtering ◽  
Tin Films

High-rate deposition of Sb-doped SnO2 films by reactive sputtering using the impedance control method

2011 ◽  
Vol 520 (4) ◽  
pp. 1178-1181 ◽  
Author(s):  
Yu Muto ◽  
Nobuto Oka ◽  
Naoki Tsukamoto ◽  
Yoshinori Iwabuchi ◽  
Hidefumi Kotsubo ◽  
...  
Keyword(s):  
Control Method ◽  
Impedance Control ◽  
Reactive Sputtering ◽  
High Rate

Studies on reactive sputtering process of TiN films using small mass analyzers

2001 ◽  
Vol 169-170 ◽  
pp. 757-762 ◽  
Author(s):  
Tatsuya Banno ◽  
Shinichiro Michizono ◽  
Yoshio Saito
Keyword(s):  
Reactive Sputtering ◽  
Small Mass ◽  
Tin Films

Reactive sputtering of TiN films at large substrate to target distances

Vacuum ◽  
1990 ◽  
Vol 40 (5) ◽  
pp. 435-444 ◽  
Author(s):  
J Musil ◽  
S Kadlec
Keyword(s):  
Reactive Sputtering ◽  
Tin Films

scholarly journals Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

2006 ◽  
Vol 73 (4) ◽  
Author(s):  
M. A. Auger ◽  
L. Vázquez ◽  
R. Cuerno ◽  
M. Castro ◽  
M. Jergel ◽  
...  
Keyword(s):  
Reactive Sputtering ◽  
Surface Roughening ◽  
Tin Films ◽  
Anomalous Surface

scholarly journals Deposition of TiN Films onto Glaze of Porcelain by Reactive Sputtering

1991 ◽  
Vol 99 (1156) ◽  
pp. 1219-1223
Author(s):  
Hiromichi ICHINOSE ◽  
Kazuo AKAMATSU ◽  
Makoto TERASAKI ◽  
Hiroaki KATSUKI ◽  
Masamitsu NAGANO
Keyword(s):  
Reactive Sputtering ◽  
Tin Films

Surface and bulk properties of boride/nitride nanoscale films

1997 ◽  
Vol 501 ◽  
Author(s):  
R. A. Adrievski
Keyword(s):  
Mechanical Properties ◽  
Reactive Sputtering ◽  
Inhomogeneous Deformation ◽  
Test Results ◽  
Bulk Properties ◽  
Tin Films ◽  
Nanoscale Films

ABSTRACTNanoscale TiB2/TiN films have been prepared by d.c. and r.f. magnetron non-reactive sputtering and examined by TEM, SAED, SEM, AES, XPS, XRD, AFM as well as nanoindentation. Attention has been focused on both bulk and surface physical-mechanical properties. The effect of the latter on the nanoindentaion test results seems to be very important. Two types of film fracture under a Vickers indentor connected with homogeneous and inhomogeneous deformation have been described.

scholarly journals QUANTITATIVE EVALUATION OF PINHOLE DEFECTS IN TiN FILMS PREPARED BY R.F. REACTIVE SPUTTERING

1999 ◽  
Vol 48 (12Appendix) ◽  
pp. 265-269
Author(s):  
Hitoshi UCHIDA ◽  
Shozo INOUE ◽  
Yasuhide NAKANO ◽  
Keiji KOTERAZAWA
Keyword(s):  
Quantitative Evaluation ◽  
Reactive Sputtering ◽  
Tin Films

Influence of substrate shape on TiN films prepared by reactive sputtering

1984 ◽  
Vol 111 (4) ◽  
pp. 313-322 ◽  
Author(s):  
B.O. Johansson ◽  
J.-E. Sundgren ◽  
H.T.G. Hentzell ◽  
S.-E. Karlsson
Keyword(s):  
Reactive Sputtering ◽  
Tin Films ◽  
Influence Of Substrate

The influence of porosity on whisker growth in electroplated tin films

2006 ◽  
Vol 21 (12) ◽  
pp. 2971-2974 ◽  
Author(s):  
J.P. Winterstein ◽  
M.G. Norton
Keyword(s):  
Whisker Growth ◽  
Control Method ◽  
Stress Relief ◽  
Lead Free ◽  
Tin Whisker ◽  
Tin Films ◽  
The Past ◽  
Compressive Stresses ◽  
Time Period ◽  
Lead Free Solders

Tin whisker growth has been observed since the 1950s and has become of more interest in the past 15 to 20 years due to the desire to use lead-free solders, pure tin being a good lead-free candidate. In the same time period, failure of satellites and other devices using pure tin solders has been blamed on tin whisker growth. The accepted driving force for whisker growth is compressive stresses in films. This article reports a microstructure-control method of limiting whisker growth through the introduction of pores that permit an alternate means of stress relief.

Sign in / Sign up

Export Citation Format

Share Document