A multi-technique study of the surface preparation of InSb substrate and subsequently grown CdTe films by molecular beam epitaxy

1996 ◽  
Vol 7 (1) ◽  
Author(s):  
Z.C. Feng ◽  
H. Gong ◽  
W.J. Choyke ◽  
N.J. Doyle ◽  
R.F.C. Farrow
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Cdte Films

Properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy

1988 ◽  
Vol 6 (4) ◽  
pp. 2821-2825 ◽  
Author(s):  
S. Hwang ◽  
R. L. Harper ◽  
K. A. Harris ◽  
N. C. Giles ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdte Films

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

2010 ◽  
Vol 46 (7) ◽  
pp. 693-702
Author(s):  
S. A. Denisov ◽  
V. Yu. Chalkov ◽  
V. G. Shengurov ◽  
S. P. Svetlov ◽  
D. A. Pavlov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Sapphire Surface

Topography of Si(111): Clean Surface Preparation and Silicon Molecular Beam Epitaxy

1989 ◽  
Vol 159 ◽  
Author(s):  
R. T. Tung ◽  
F. Schrey ◽  
D. J. Eaglesham
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Nucleation And Growth ◽  
Flow Mechanism ◽  
Step Flow ◽  
Original Surface ◽  
Transmission Electron ◽  
Line Defects

ABSTRACTLine defects at the interfaces of epitaxial silicide layers grown at room temperature on Si(111) are found to correspond to steps on the original surface. This has enabled the examination, by transmission electron microscopy, of the topography of large areas of the Si surface after various treatments. Methods for removal of surface oxide and carbide are compared. Silicon molecular beam epitaxy (MBE) is shown to occur via step-flow mechanism at high temperatures, and through nucleation and growth of islands on terraces at low temperatures.

Silicon surface preparation for III-V molecular beam epitaxy

2015 ◽  
Vol 413 ◽  
pp. 17-24 ◽  
Author(s):  
K. Madiomanana ◽  
M. Bahri ◽  
J.B. Rodriguez ◽  
L. Largeau ◽  
L. Cerutti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Surface ◽  
Molecular Beam ◽  
Surface Preparation
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