Effects of annealing and surface preparation on the properties of polycrystalline CdZnTe films grown by molecular beam epitaxy

1990 ◽  
Vol 8 (3) ◽  
pp. 2012-2019 ◽  
Author(s):  
S. A. Ringel ◽  
R. Sudharsanan ◽  
A. Rohatgi ◽  
M. S. Owens ◽  
H. P. Gillis
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

2010 ◽  
Vol 46 (7) ◽  
pp. 693-702
Author(s):  
S. A. Denisov ◽  
V. Yu. Chalkov ◽  
V. G. Shengurov ◽  
S. P. Svetlov ◽  
D. A. Pavlov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Sapphire Surface

Topography of Si(111): Clean Surface Preparation and Silicon Molecular Beam Epitaxy

1989 ◽  
Vol 159 ◽  
Author(s):  
R. T. Tung ◽  
F. Schrey ◽  
D. J. Eaglesham
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Nucleation And Growth ◽  
Flow Mechanism ◽  
Step Flow ◽  
Original Surface ◽  
Transmission Electron ◽  
Line Defects

ABSTRACTLine defects at the interfaces of epitaxial silicide layers grown at room temperature on Si(111) are found to correspond to steps on the original surface. This has enabled the examination, by transmission electron microscopy, of the topography of large areas of the Si surface after various treatments. Methods for removal of surface oxide and carbide are compared. Silicon molecular beam epitaxy (MBE) is shown to occur via step-flow mechanism at high temperatures, and through nucleation and growth of islands on terraces at low temperatures.

Silicon surface preparation for III-V molecular beam epitaxy

2015 ◽  
Vol 413 ◽  
pp. 17-24 ◽  
Author(s):  
K. Madiomanana ◽  
M. Bahri ◽  
J.B. Rodriguez ◽  
L. Largeau ◽  
L. Cerutti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Surface ◽  
Molecular Beam ◽  
Surface Preparation

scholarly journals Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

2002 ◽  
Vol 7 ◽  
Author(s):  
R. M. Feenstra ◽  
J. E. Northrup ◽  
Jörg Neugebauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Direct Determination ◽  
Surface Preparation ◽  
Scanning Tunneling ◽  
Molecular Beam Epitaxy Growth ◽  
Tunneling Microscopy ◽  
Preparation Conditions ◽  
Surface Reconstructions ◽  
Image Position

A review of surface structures of bare and adsorbate-covered GaN (0001) and (000) surfaces is presented, including results for In, Mg, Si, and H adsorbates. Emphasis is given to direct determination of surface structure employing experimental techniques such as scanning tunneling microscopy, electron diffraction, and Auger electron spectroscopy, and utilizing first principles computations of the total energy of various structural models. Different surface stoichiometries are studied experimentally by varying the surface preparation conditions (e.g. Ga-rich compared to N-rich), and the stoichiometry is included in the theory by performing calculations for various chemical potentials of the constituent atoms. Based on the work reviewed here, surface reconstructions for plasma-assisted molecular beam epitaxy growth of GaN (0001) and (000) surfaces are fairly well understood, but reconstructions for reactive molecular beam epitaxy or for metal-organic vapor phase epitaxy (both involving H, at moderate and high temperatures, respectively) are less well understood at present.

scholarly journals Processing Development and Surface Preparation Review. Gas Source Molecular Beam Epitaxy of II-VI Compound Semiconductors with Use of Group VI Hydrides and Group II Metal.

Shinku ◽  
1996 ◽  
Vol 39 (11) ◽  
pp. 579-583
Author(s):  
Ken-chi OHTSUKA ◽  
Masayuki IMAIZUMI ◽  
Muneyoshi SUITA ◽  
Yasuyuki ENDOH ◽  
Hiroshi SUGIMOTO
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Compound Semiconductors ◽  
Group Vi ◽  
Gas Source ◽  
Group Ii

Surface Control of ZrB2 (0001) Substrate for Molecular-Beam Epitaxy of GaN

2003 ◽  
Vol 798 ◽  
Author(s):  
Jun Suda ◽  
Hiroyasu Yamashita ◽  
Robert Armitage ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
High Vacuum ◽  
Surface Preparation ◽  
High Energy ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Preparation Methods ◽  
Thermal Cleaning

ABSTRACTZirconium diboride (ZrB2) is a promising lattice-matched substrate for GaN-based materials. A key issue to realize high-quality heteroepitaxial growth is preparation of the substrate surface. The ZrB2 surface was studied by x-ray photoemission spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). XPS results indicated the presence of both ZrO2 and ZrB2 on the as-received substrate surface. Thermal cleaning at 1000°C in ultra-high vacuum, Ar+ ion sputtering, and wet chemical treatments were examined as surface preparation methods. After treatment with HF acid, the O peak intensity was much reduced. The combination of HF treatment and thermal cleaning resulted in sharp and intense RHEED from the ZrB2 surface. GaN grown on the surface by molecular-beam epitaxy exhibited intense photoluminescence, suggesting that this treatment is effective to obtain high-quality GaN on ZrB2 substrates.

Sign in / Sign up

Export Citation Format

Share Document