Surface preparation effect of GaAs(110) substrates on the ZnSe epitaxial layer grown by molecular beam epitaxy

1999 ◽  
Vol 68 (6) ◽  
pp. 627-629 ◽  
Author(s):  
H.-C. Ko ◽  
Y.-S. Kim ◽  
C.-O. Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Surface Preparation

Oxidation of Strained Si-Ge Layers Grown by MBE

1987 ◽  
Vol 102 ◽  
Author(s):  
G.L. Patton ◽  
S.S. Iyer ◽  
S.L. Delage ◽  
E. Ganin ◽  
R.C. Mcintosh
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Epitaxial Layer ◽  
Molecular Beam ◽  
Fast Growth ◽  
Strained Si ◽  
Substrate Interface ◽  
Growth Regime ◽  
Oxide Substrate ◽  
Strained Sige

ABSTRACTThe oxidation of strained SiGe alloy layers grown by Molecular Beam Epitaxy (MBE) was studied. An initial fast growth regime was identified for 800°C steam oxidations, where the growth rate is 2.5 times that of silicon. The oxides formed on SiGe were found to be essentially Ge-free: Ge present in the material is rejected by the oxide, resulting in the formation of a Ge-rich epitaxial layer at the oxide/substrate interface.

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

2010 ◽  
Vol 46 (7) ◽  
pp. 693-702
Author(s):  
S. A. Denisov ◽  
V. Yu. Chalkov ◽  
V. G. Shengurov ◽  
S. P. Svetlov ◽  
D. A. Pavlov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Sapphire Surface

Topography of Si(111): Clean Surface Preparation and Silicon Molecular Beam Epitaxy

1989 ◽  
Vol 159 ◽  
Author(s):  
R. T. Tung ◽  
F. Schrey ◽  
D. J. Eaglesham
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Surface Preparation ◽  
Nucleation And Growth ◽  
Flow Mechanism ◽  
Step Flow ◽  
Original Surface ◽  
Transmission Electron ◽  
Line Defects

ABSTRACTLine defects at the interfaces of epitaxial silicide layers grown at room temperature on Si(111) are found to correspond to steps on the original surface. This has enabled the examination, by transmission electron microscopy, of the topography of large areas of the Si surface after various treatments. Methods for removal of surface oxide and carbide are compared. Silicon molecular beam epitaxy (MBE) is shown to occur via step-flow mechanism at high temperatures, and through nucleation and growth of islands on terraces at low temperatures.

Silicon surface preparation for III-V molecular beam epitaxy

2015 ◽  
Vol 413 ◽  
pp. 17-24 ◽  
Author(s):  
K. Madiomanana ◽  
M. Bahri ◽  
J.B. Rodriguez ◽  
L. Largeau ◽  
L. Cerutti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Surface ◽  
Molecular Beam ◽  
Surface Preparation
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