Barrier height enhancement in WSi x /GaAs Schottky diodes by rapid thermal annealing

1993 ◽  
Vol 4 (4) ◽  
Author(s):  
J. Osvald ◽  
T. Lalinsk�
Keyword(s):  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes

Electrical and Material Characterization of the Stability of ALGaAs and GaAs Planar Doped Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Larry P. Sadwick ◽  
Dwight C. Streit
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Doping Profile ◽  
Charge Densities ◽  
Diode Ideality Factor ◽  
Sheet Charge ◽  
The Stability ◽  
Silicon Sheet

AbstractIn this work we have studied the effects of silicon planar doping on the electrical and optical properties of GaAs, and the effects of rapid thermal annealing on AIGaAs planar-doped structures. MBE-grown GaAs epilayers with multiple planar-doped layers displayed a 1.2 eV photoluminescence peak, presumably due to gallium vacancy - donor complexes, for samples with nominal silicon sheet densities much greater than measured charge densities. The Hall mobilities of these samples were also reduced compared to both uniformly-doped and planar-doped structures whose silicon areal densities were more nearly equal to measured sheet charge densities, although X-Ray rocking curves were nearly identical in all cases. Planar-doped AIGaAs Schottky diodes had nearly ideal electrical characteristics. Rapid thermal annealing of the planar-doped structures before fabrication increased the diode ideality factor from n=1.06 to n=1.60, seriously degraded the saturation current and breakdown voltage, and increased the doping profile FWHM from 60Å to 170Å.

Effects of Rapid Thermal Annealing on W/Si1−xGex Contacts

1993 ◽  
Vol 320 ◽  
Author(s):  
V. Aubry ◽  
F. Meyer ◽  
R. Laval ◽  
C. Clerc ◽  
P. Warren ◽  
...  
Keyword(s):  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Reaction Products ◽  
X Ray Diffraction ◽  
Parasitic Effect ◽  
Strained Films

ABSTRACTThermal reaction of W with Si1−xGex films epitaxially grown by Rapid Thermal Chemical Vapor Deposition was investigated in the temperature range 500°C - 1000°C. The samples were annealed either in a Rapid Thermal Annealing (RTA) system or in a conventional furnace, both in flowing nitrogen. The reaction products were investigated by Rutherford Backscattering Spectroscopy (RBS), Energy Dispersive Spectrometry (EDS) and X-ray diffraction (XRD). Sheet resistance measurements were also performed to follow the progress of the reaction. The reaction of W with Si0.67Ge0.33 is similar to that of W with silicon. W reacts with silicon to form tetragonal WSi2. The Ge-content in the silicide is lower than that of the asdeposited alloy. It is shown that an oxygen contamination occurs during conventional annealing and leads to the formation of non homogeneous Si1−x Gex unreacted alloy below the silicide film. Rapid thermal annealing prevents this parasitic effect and the unreacted film remains homogeneous although a slight decrease in the Ge-content is observed. These results are correlated with Schottky barrier height measurements on p-Si0.83Ge0.17 partially strained films. We observed an increase of the barrier height with increasing the temperature for annealing from 500°C to 1000°C. This trend may be explained either by strain relaxation or (and) Ge-content decrease in the unreacted alloy.

Preparation of SiTiSi2 Schottky diodes by rapid thermal annealing

1994 ◽  
Vol 246 (1-2) ◽  
pp. 172-176 ◽  
Author(s):  
J. Perez-Rigueiro ◽  
C. Jimenez ◽  
R. Perez-Casero ◽  
J.M. Martinez-Duart
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes

scholarly journals Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093502 ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Latzel ◽  
S. Christiansen ◽  
V. Kumar ◽  
R. Singh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Barrier Diodes

Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

2013 ◽  
Vol 47 (1) ◽  
pp. 81-84 ◽  
Author(s):  
P. A. Ivanov ◽  
N. D. Il’inskaya ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
A. V. Afanas’ev ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing

2021 ◽  
Vol 68 (3) ◽  
pp. 1176-1180
Author(s):  
Juan Wang ◽  
Dan Zhao ◽  
Guoqing Shao ◽  
Zhangcheng Liu ◽  
Xiaohui Chang ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Planar Structure
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