scholarly journals Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes

2015 ◽  
Vol 107 (9) ◽  
pp. 093502 ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Latzel ◽  
S. Christiansen ◽  
V. Kumar ◽  
R. Singh
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Barrier Diodes

TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

2008 ◽  
Vol 22 (14) ◽  
pp. 2309-2319 ◽  
Author(s):  
K. ERTURK ◽  
M. C. HACIISMAILOGLU ◽  
Y. BEKTORE ◽  
M. AHMETOGLU
Keyword(s):  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Semiconductor Interface ◽  
Linear Portion ◽  
Barrier Heights ◽  
P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

scholarly journals Determination of the laterally homogeneous barrier height of palladium Schottky barrier diodes on n-Ge (111)

2010 ◽  
Vol 13 (5-6) ◽  
pp. 371-375 ◽  
Author(s):  
A. Chawanda ◽  
K.T. Roro ◽  
F.D. Auret ◽  
W. Mtangi ◽  
C. Nyamhere ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes

Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes

2007 ◽  
Vol 253 (18) ◽  
pp. 7467-7470 ◽  
Author(s):  
H. Doğan ◽  
H. Korkut ◽  
N. Yıldırım ◽  
A. Turut
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Diodes
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