A detailed analysis and electrical modeling of gate oxide shorts in MOS transistors

1996 ◽  
Vol 8 (3) ◽  
pp. 229-239 ◽  
Author(s):  
J. Segura ◽  
C. De Benito ◽  
A. Rubio ◽  
C. F. Hawkins
Keyword(s):  
Detailed Analysis ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Electrical Modeling

Experimental and Simulation Results of Magnetic Modulation of Gate Oxide Tunneling Current in Nanoscaled MOS Transistors

2015 ◽  
Vol 36 (4) ◽  
pp. 387-389 ◽  
Author(s):  
Gabriela A. Rodriguez-Ruiz ◽  
Edmundo A. Gutierrez-Dominguez ◽  
Arturo Sarmiento-Reyes ◽  
Zlatan Stanojevic ◽  
Hans Kosina ◽  
...  
Keyword(s):  
Tunneling Current ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Simulation Results ◽  
Gate Oxide Tunneling

Detailed analysis of edge effects in SIMOX-MOS transistors

1992 ◽  
Vol 39 (4) ◽  
pp. 874-882 ◽  
Author(s):  
T. Elewa ◽  
B. Kleveland ◽  
S. Cristoloveanu ◽  
B. Boukriss ◽  
A. Chovet
Keyword(s):  
Detailed Analysis ◽  
Edge Effects ◽  
Mos Transistors

Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxide

1990 ◽  
Vol 37 (3) ◽  
pp. 708-717 ◽  
Author(s):  
M. Bourcerie ◽  
B.S. Doyle ◽  
J.-C. Marchetaux ◽  
J.-C. Soret ◽  
A. Boudou
Keyword(s):  
Gate Oxide ◽  
Interfacial Region ◽  
Mos Transistors ◽  
Hot Carrier ◽  
Oxide Traps

1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance

2017 ◽  
Vol 897 ◽  
pp. 489-492 ◽  
Author(s):  
Dethard Peters ◽  
Thomas Aichinger ◽  
Thomas Basler ◽  
Wolfgang Bergner ◽  
Daniel Kueck ◽  
...  
Keyword(s):  
Detailed Analysis ◽  
Gate Voltage ◽  
High Performance ◽  
High Reliability ◽  
Dynamic Performance ◽  
Life Time ◽  
Gate Oxide ◽  
Voltage Range ◽  
Failure Evolution

A detailed analysis of the typical static and dynamic performance of the new developed Infineon 1200V CoolSiCTM MOSFET is shown which is designed for an on-resistance of 45 mΩ. In order to be compatible to various standard gate drivers the gate voltage range is designed for-5 V in off-state and +15 V in on-state. Long term gate oxide life time tests reveal that the extrinsic failure evolution follows the linear E-model which allows a confident prediction of the failure rate within the life time of the device of 0.2 ppm in 20 years under specified use condition.

Study on Effect of Electron Beam Irradiation in SEM-Based Nanoprobing on MOS Transistor

2016 ◽  
Author(s):  
Hara Noriko ◽  
Bito Nanami ◽  
Ebisuda Mai ◽  
Tabata Suguru ◽  
Numazaki Naoki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Oxide Layer ◽  
Electron Beam Irradiation ◽  
Gate Oxide ◽  
Mos Transistors ◽  
Beam Irradiation ◽  
Mos Transistor ◽  
Significant Change ◽  
Iv Curves

Abstract Nanoprobing is an indispensable method for failure analysis to identify failure cells and to approach the root causes, providing electric characteristics of the failure of the MOS transistor. In this paper, the characteristic degradation on MOS transistors with SEM-based nanoprobing is studied to find out the critical accelerating voltage, comparing it to the characteristic obtained by the mechanical prober. In this experiment, n-type MOS transistors with thick gate oxide layer (40nm) were used. The effect of electron beam irradiation was also investigated. Significant change was not observed in n+(drain)/p-well IV curves. The paper looks at the influence of the additional phenomena during SEM-based nanoprobing analysis on a characteristics change of a specimen. For MOS transistor with thick gate oxide used in this study, irradiation influence is possibly more notable than normal voltage cell cases.

Silicon-on-diamond MOS-transistors with thermally grown gate oxide

2002 ◽  
Author(s):  
B. Edholm ◽  
L. Vestling ◽  
M. Bergh ◽  
S. Tiensuu ◽  
A. Soderbarg
Keyword(s):  
Gate Oxide ◽  
Mos Transistors ◽  
Thermally Grown
Sign in / Sign up

Export Citation Format

Share Document