Segregation and diffusion of impurities from doped Si 1−x Ge x films into silicon

2000 ◽  
Vol 369 (1-2) ◽  
pp. 222-225 ◽  
Author(s):  
S Kobayashi ◽  
T Aoki ◽  
N Mikoshiba ◽  
M Sakuraba ◽  
T Matsuura ◽  
...  
Keyword(s):  
And Diffusion ◽  
Diffusion Of Impurities

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Adsorption and Diffusion of Aluminum, Gallium and Indium Atoms on Semi-Polar Gallium Nitride Substrate Surface: A First Principle Simulation

2014 ◽  
Vol 1015 ◽  
pp. 598-601
Author(s):  
Han Yan ◽  
Pei Wang
Keyword(s):  
Molecular Dynamics ◽  
Gallium Nitride ◽  
Adsorption Energy ◽  
First Principles ◽  
Substrate Surface ◽  
Diffusion Barriers ◽  
First Principle ◽  
Barrier Energy ◽  
Calculation Results ◽  
And Diffusion

The first principles simulations are performed to investigate the adsorption and diffusion of aluminum, gallium and indium atoms on semi-polar gallium nitrides surface, the calculations are performed by using the Car–Parrinello molecular dynamics (CPMD) method. The aluminum ad-atoms adsorption in path 1 and path 3 are much stable than in path 2. The maximum adsorption energy of path1, path2 and path3 are different, which reveal that a different barrier energy pathway between indium ad-atom diffuse along path 1, path2 and path3. Our calculation results reveal that diffusion barriers of aluminum, gallium and indium atoms on semi-polar gallium nitride surface are anisotropy.

N-Type Doping and Diffusion of Impurities in Diamond

1989 ◽  
Vol 162 ◽  
Author(s):  
S. A. Kajihara ◽  
A. Antonelli ◽  
J. Bernholc
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
First Principles Calculations ◽  
High Activation ◽  
Substitutional Site ◽  
Self Diffusion ◽  
The Stability ◽  
Kinetic Trapping ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTFirst-principles calculations were used to study Li, Na, and P as prospective shallow donors in diamond. As expected, P prefers the substitutional site while Li and Na are interstitial donors. All three impurities were found to be shallow. However, their solubilities are very low, which makes them unsuitable for incorporation into diamond via in-diffusion. Instead, kinetic trapping during growth or ion implantation must be used. Interstitial impurities are particularly appropriate for ion implantation, since there is no need to replace host atoms. Considering the stability of the impurity at the dopant site, substitutional P is expected to diffuse by the vacancy mechanism and to have a high activation energy by analogy to self-diffusion. For Li and Na, the activation energies for interstitial channel diffusion are 0.85 and 1.6 eV, respectively. Li is thus a fast diffuser even at room temperature, while Na would remain stable up to moderate temperatures.

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