Segregation and diffusion of impurities from doped Si 1−x Ge x films into silicon

2000 ◽  
Vol 369 (1-2) ◽  
pp. 222-225 ◽  
Author(s):  
S Kobayashi ◽  
T Aoki ◽  
N Mikoshiba ◽  
M Sakuraba ◽  
T Matsuura ◽  
...  
Keyword(s):  
And Diffusion ◽  
Diffusion Of Impurities

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

scholarly journals Ronald Charles Newman FInstP. 10 December 1931 — 30 July 2014

2015 ◽  
Vol 62 ◽  
pp. 447-459
Author(s):  
Bruce A. Joyce
Keyword(s):  
Gallium Arsenide ◽  
Integrated Circuits ◽  
Epitaxial Growth ◽  
Vibrational Mode ◽  
Fundamental Importance ◽  
Local Vibrational Mode ◽  
Mode Spectroscopy ◽  
And Diffusion

Ronald Charles (Ron) Newman was one of the most versatile semiconductor physicists of his generation and is distinguished for his work in several different areas, most notably epitaxial growth and the behaviour of impurities and dopants in a range of device-related materials, mainly silicon and gallium arsenide. His most significant contributions came from the application of local vibrational-mode spectroscopy to studies of the segregation and diffusion of oxygen and hydrogen in silicon. The results were of fundamental importance in the fabrication of integrated circuits.

Preparation and thermolysis of a single-source precursor to gallium arsenide phosphide

1995 ◽  
Vol 1 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Steven R. Aubuchon ◽  
Michael S. Lube ◽  
Richard L. Wells
Keyword(s):  
Gallium Arsenide ◽  
Single Source ◽  
Gallium Arsenide Phosphide ◽  
Single Source Precursor

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

2016 ◽  
Vol 4 (8) ◽  
pp. 2909-2918 ◽  
Author(s):  
Ann L. Greenaway ◽  
Allison L. Davis ◽  
Jason W. Boucher ◽  
Andrew J. Ritenour ◽  
Shaul Aloni ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Electronic Properties ◽  
Low Cost ◽  
Vapor Transport ◽  
Mixed Powder ◽  
Gallium Arsenide Phosphide

Close-spaced vapor transport provides GaAs1−xPx with controlled composition and competitive electronic properties.

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