Segregation and diffusion of impurities from doped Si 1−x Ge x films into silicon

2000 ◽  
Vol 369 (1-2) ◽  
pp. 222-225 ◽  
Author(s):  
S Kobayashi ◽  
T Aoki ◽  
N Mikoshiba ◽  
M Sakuraba ◽  
T Matsuura ◽  
...  
Keyword(s):  
And Diffusion ◽  
Diffusion Of Impurities

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

N-Type Doping and Diffusion of Impurities in Diamond

1989 ◽  
Vol 162 ◽  
Author(s):  
S. A. Kajihara ◽  
A. Antonelli ◽  
J. Bernholc
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
First Principles Calculations ◽  
High Activation ◽  
Substitutional Site ◽  
Self Diffusion ◽  
The Stability ◽  
Kinetic Trapping ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTFirst-principles calculations were used to study Li, Na, and P as prospective shallow donors in diamond. As expected, P prefers the substitutional site while Li and Na are interstitial donors. All three impurities were found to be shallow. However, their solubilities are very low, which makes them unsuitable for incorporation into diamond via in-diffusion. Instead, kinetic trapping during growth or ion implantation must be used. Interstitial impurities are particularly appropriate for ion implantation, since there is no need to replace host atoms. Considering the stability of the impurity at the dopant site, substitutional P is expected to diffuse by the vacancy mechanism and to have a high activation energy by analogy to self-diffusion. For Li and Na, the activation energies for interstitial channel diffusion are 0.85 and 1.6 eV, respectively. Li is thus a fast diffuser even at room temperature, while Na would remain stable up to moderate temperatures.

Meridional Circulation, Turbulence, and Diffusion Processes in Stars

1976 ◽  
Vol 32 ◽  
pp. 109-116 ◽  
Author(s):  
S. Vauclair
Keyword(s):  
Convection Zone ◽  
Diffusion Processes ◽  
Meridional Circulation ◽  
Diffusion Time ◽  
Work In Progress ◽  
First Results ◽  
Stellar Envelopes ◽  
And Diffusion ◽  
Turbulence And Diffusion ◽  
Hr Diagram

This paper gives the first results of a work in progress, in collaboration with G. Michaud and G. Vauclair. It is a first attempt to compute the effects of meridional circulation and turbulence on diffusion processes in stellar envelopes. Computations have been made for a 2 Mʘstar, which lies in the Am - δ Scuti region of the HR diagram.Let us recall that in Am stars diffusion cannot occur between the two outer convection zones, contrary to what was assumed by Watson (1970, 1971) and Smith (1971), since they are linked by overshooting (Latour, 1972; Toomre et al., 1975). But diffusion may occur at the bottom of the second convection zone. According to Vauclair et al. (1974), the second convection zone, due to He II ionization, disappears after a time equal to the helium diffusion time, and then diffusion may happen at the bottom of the first convection zone, so that the arguments by Watson and Smith are preserved.

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