Segregation and diffusion of impurities from doped Si 1−x Ge x films into silicon

2000 ◽  
Vol 369 (1-2) ◽  
pp. 222-225 ◽  
Author(s):  
S Kobayashi ◽  
T Aoki ◽  
N Mikoshiba ◽  
M Sakuraba ◽  
T Matsuura ◽  
...  
Keyword(s):  
And Diffusion ◽  
Diffusion Of Impurities

Ion-Beam-Induced Epitaxy and Solute Segregation at the Si Crystal-Amorphous Interface

1988 ◽  
Vol 128 ◽  
Author(s):  
J. M. Poate ◽  
D. C. Jacobson ◽  
F. Priolo ◽  
Michael O. Thompson
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Ion Beam ◽  
Solute Segregation ◽  
Ion Beams ◽  
Temperature Range ◽  
Crystal Growth Process ◽  
Amorphous Si ◽  
And Diffusion ◽  
Diffusion Of Impurities

ABSTRACTSegregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed. The use of ion beams to enhance the crystal growth process has resulted in novel behavior for fast diffusers such as Au. Diffusion is enhanced in the temperature range 300–700 K with activation energies ∼0.3 eV. Segregation and trapping are analogous to behavior at liquid-solid interfaces

Evaluation of the efficacy of gallium-aluminum-arsenide laser acupuncture in the management of knee osteoarthritis

2021 ◽  
Vol 16 (2) ◽  
pp. 167
Author(s):  
AhmadG Elwahidy ◽  
Aliaa Elgendy ◽  
EmadN Zikri ◽  
HebaF Shafei ◽  
Rasha Monir ◽  
...  
Keyword(s):  
Knee Osteoarthritis ◽  
Aluminum Arsenide ◽  
Laser Acupuncture ◽  
Gallium Aluminum Arsenide
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