High energy oxygen irradiation-induced defects in Fe-doped semi-insulating indium phosphide by positron annihilation technique

2017 ◽  
Vol 31 (04) ◽  
pp. 1750019
Author(s):  
S. Pan ◽  
A. Mandal ◽  
Md. A. Sohel ◽  
A. K. Saha ◽  
D. Das ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Positron Annihilation ◽  
Room Temperature ◽  
High Energy ◽  
Average Lifetime ◽  
Defect States ◽  
Positron Trapping ◽  
Radiation Induced ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation technique is applied to study the recovery of radiation-induced defects in 140 MeV oxygen (O[Formula: see text]) irradiated Fe-doped semi-insulating indium phosphide during annealing over a temperature region of 25[Formula: see text]C–650[Formula: see text]C. Lifetime spectra of the irradiated sample are fitted with three lifetime components. Trapping model analysis is used to characterize defect states corresponding to the de-convoluted lifetime values. After irradiation, the observed average lifetime of positron [Formula: see text] ps at room temperature is higher than the bulk lifetime by 21 ps which reveals the presence of radiation-induced defects in the material. A decrease in [Formula: see text] occurs during room temperature 25[Formula: see text]C to 200[Formula: see text]C indicating the dissociation of higher order defects, might be due to positron trapping in acceptor-type of defects ([Formula: see text]). A reverse annealing stage is found at temperature range of 250[Formula: see text]C–425[Formula: see text]C for [Formula: see text]-parameter probably due to the migration of vacancies and the formation of vacancy clusters. Increase in [Formula: see text]-parameter from 325[Formula: see text]C to 425[Formula: see text]C indicates the change in the nature of predominant positron trapping sites. Beyond 425[Formula: see text]C, [Formula: see text], [Formula: see text]-parameter and [Formula: see text]-parameter starts decreasing and around 650[Formula: see text]C, [Formula: see text] and [Formula: see text]-parameter approached almost the bulk value showing the annealing out of radiation-induced defects.

Electrical characterization of deep defect states in Galliumnitride co-implanted with magnesium and sulfur ions

2002 ◽  
Vol 93 (1-3) ◽  
pp. 85-89 ◽  
Author(s):  
A Krtschil ◽  
A Kielburg ◽  
H Witte ◽  
A Krost ◽  
J Christen ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Defect States ◽  
Deep Defect

Monocrystalline InP Nanotubes

2003 ◽  
Vol 789 ◽  
Author(s):  
Erik. P. A. M. Bakkers ◽  
Louis F. Feiner ◽  
Marcel. A. Verheijen ◽  
Jorden A. van Dam ◽  
Silvano De Franceschi ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Blue Shift ◽  
Synthesis Temperature ◽  
Size Quantization ◽  
Defect States ◽  
Vapor Liquid Solid ◽  
Strong Polarization ◽  
Zinc Blende ◽  
Vls Growth ◽  
Zinc Blende Structure

ABSTRACTIndium phosphide (InP) nanowires and nanotubes have been synthesized via the vapor-liquid-solid (VLS) growth mechanism. The wires as well as the tubes are crystalline and have the (bulk) zinc blende structure. Compared to the nanowires the nantubes are formed at higher temperatures. A simple model for the formation of the nanotubes is presented. The diameter of the wires and the wall thickness of the tubes can be controlled by the synthesis temperature. Photoluminescence measurements on individual wires show a strong polarization dependency. Moreover, the nanostructures exhibit a considerable blue shift with respect to bulk emission as a result of size-quantization. In addition, this blue shift indicates that the optical properties are not dominated by defect states.

Sign in / Sign up

Export Citation Format

Share Document