Theory of valence and conduction band offsets in Si/Si 1−yCy heterostructures

2002 ◽  
Vol 31 (5) ◽  
pp. 253-256 ◽  
Author(s):  
A.J. Ekpunobi ◽  
A.O.E. Animalu
Keyword(s):  
Conduction Band ◽  
Band Offsets

scholarly journals Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

2004 ◽  
Vol 241 (10) ◽  
pp. 2246-2252 ◽  
Author(s):  
S. Sayan ◽  
R. A. Bartynski ◽  
X. Zhao ◽  
E. P. Gusev ◽  
D. Vanderbilt ◽  
...  
Keyword(s):  
Conduction Band ◽  
Gate Stack ◽  
Band Offsets ◽  
Inverse Photoemission ◽  
Photoemission Study

Enhanced performance of CsPbBr3 perovskite solar cells by reducing the conduction band offsets via a Sr-modified TiO2 layer

2020 ◽  
Vol 529 ◽  
pp. 147119 ◽  
Author(s):  
Xiaobing Cao ◽  
Guoshuai Zhang ◽  
Yifan Cai ◽  
Long Jiang ◽  
Yan Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Perovskite Solar Cells ◽  
Tio2 Layer ◽  
Band Offsets

Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures

1999 ◽  
Vol 85 (2) ◽  
pp. 985-993 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Conduction Band ◽  
Admittance Spectroscopy ◽  
Spectroscopy Analysis ◽  
Band Offsets

Valence and conduction band offsets at low-k a-SiOxCy:H/a-SiCxNy:H interfaces

2014 ◽  
Vol 116 (11) ◽  
pp. 113703 ◽  
Author(s):  
Sean W. King ◽  
Justin Brockman ◽  
Marc French ◽  
Milt Jaehnig ◽  
Markus Kuhn ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Offsets ◽  
Low K

Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS

1996 ◽  
Vol 39 (2) ◽  
pp. 79-81 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
A.V. Govorkov ◽  
A.A. Chelniy ◽  
A.G. Milnes ◽  
...  
Keyword(s):  
Conduction Band ◽  
Band Offsets

Effects of Substrate Orientation on the Valence Band Splittings and Valence Band Offsets in GaN and AlN Films

1997 ◽  
Vol 482 ◽  
Author(s):  
J. A. Majewski ◽  
M. Städele
Keyword(s):  
Valence Band ◽  
Conduction Band ◽  
First Principles ◽  
Stacking Fault ◽  
Type I ◽  
Band Offsets ◽  
Substrate Orientation ◽  
First Principles Study

AbstractWe present a first-principles study of heteroepitaxial interfaces between GaN and both cubic as well as wurtzite AlN substrates oriented along main cubic or hexagonal directions and of stacking fault interfaces between cubic and wurtzite GaN. Our calculations show that all studied heterostructures are of type I. Valence band offsets for GaN/AlN are nearly independent of the substrate orientation and of the order of 0.8 eV. The valence and conduction band offsets for a stacking fault interface are predicted to be 40 meV and 175 meV, respectively.

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