Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors

1999 ◽  
Vol 85 (2) ◽  
pp. 978-984 ◽  
Author(s):  
D. V. Singh ◽  
K. Rim ◽  
T. O. Mitchell ◽  
J. L. Hoyt ◽  
J. F. Gibbons
Keyword(s):  
Metal Oxide ◽  
Conduction Band ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage

Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices

2012 ◽  
Vol 100 (6) ◽  
pp. 062907 ◽  
Author(s):  
Lior Kornblum ◽  
Boris Meyler ◽  
Catherine Cytermann ◽  
Svetlana Yofis ◽  
Joseph Salzman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

2013 ◽  
Vol 103 (14) ◽  
pp. 143509 ◽  
Author(s):  
Noriyuki Taoka ◽  
Masafumi Yokoyama ◽  
Sang Hyeon Kim ◽  
Rena Suzuki ◽  
Sunghoon Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Conduction Band ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fermi Level Pinning
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