Quantitative SIMS Tiefenprofil Analyse

2014 ◽  
Vol 26 (2) ◽  
pp. 27-35 ◽  
Author(s):  
Kirsten Ingolf Schiffmann
Keyword(s):  
1996 ◽  
Vol 60 (3) ◽  
pp. 290-294 ◽  
Author(s):  
Hiroyuki T. Takeshita ◽  
Takuya Kagawa ◽  
Ryosuke O. Suzuki ◽  
Toshio Oishi ◽  
Katsutoshi Ono

1986 ◽  
Vol 90 (1-2) ◽  
pp. 105-115 ◽  
Author(s):  
Tsukasa Kuroda ◽  
Shozo Tamaki

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Venkatasubramanian ◽  
S. K. Ghandhi

ABSTRACTAtmospheric OMVPE has been used, with SiH4 as the dopant, to grow n+-GaAs with free-carrier levels upto about 9e18 cm−3. Following a steady rise in carrier concentration with dopant pressure, the carrier concentration is seen to fall rapidly with further doping. Hall-effect and quantitative SIMS data have been used to obtain the distribution of silicon onto donor and acceptor sites. It is seen that there is negligible compensation upto free-carrier levels of about 5e18 cm−3. The mechanism of compensation throughout the doping range is discussed.


2003 ◽  
Vol 35 (6) ◽  
pp. 491-495 ◽  
Author(s):  
Yu. Kudriavtsev ◽  
A. Villegas ◽  
A. Godines ◽  
R. Asomoza ◽  
I. Usov

2018 ◽  
Vol 90 (9) ◽  
pp. 5654-5663 ◽  
Author(s):  
Sage J. B. Dunham ◽  
Joanna F. Ellis ◽  
Nameera F. Baig ◽  
Nydia Morales-Soto ◽  
Tianyuan Cao ◽  
...  

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