Extraordinary Strong Band‐Edge Absorption in Distorted Chalcogenide Perovskites

Solar RRL ◽  
2020 ◽  
Vol 4 (5) ◽  
pp. 1900555 ◽  
Author(s):  
Yukinori Nishigaki ◽  
Takayuki Nagai ◽  
Mitsutoshi Nishiwaki ◽  
Takuma Aizawa ◽  
Masayuki Kozawa ◽  
...  
Keyword(s):  
Band Edge ◽  
Edge Absorption ◽  
Strong Band

scholarly journals Extraordinary Strong Band‐Edge Absorption in Distorted Chalcogenide Perovskites

Solar RRL ◽  
2020 ◽  
Vol 4 (5) ◽  
pp. 2070051
Author(s):  
Yukinori Nishigaki ◽  
Takayuki Nagai ◽  
Mitsutoshi Nishiwaki ◽  
Takuma Aizawa ◽  
Masayuki Kozawa ◽  
...  
Keyword(s):  
Band Edge ◽  
Edge Absorption ◽  
Strong Band

The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar
Keyword(s):  
Optical Properties ◽  
Planar Waveguide ◽  
Waveguide Structure ◽  
Propagation Loss ◽  
Band Edge ◽  
Optical Confinement ◽  
Structural And Optical Properties ◽  
Edge Absorption

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

1989 ◽  
Vol 54 (14) ◽  
pp. 1356-1358 ◽  
Author(s):  
Alan Kost ◽  
H. C. Lee ◽  
Yao Zou ◽  
P. D. Dapkus ◽  
Elsa Garmire
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Coefficients ◽  
Edge Absorption

Vanadium related near‐band‐edge absorption bands in three SiC polytypes

1995 ◽  
Vol 78 (5) ◽  
pp. 3160-3163 ◽  
Author(s):  
J. R. Jenny ◽  
M. Skowronski ◽  
W. C. Mitchel ◽  
H. M. Hobgood ◽  
R. C. Glass ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Absorption Bands ◽  
Edge Absorption

Behavior of Deep Defects After Hydrogen Passivation in Znte Studied by Photoluminescence and Photoconductivity

1998 ◽  
Vol 510 ◽  
Author(s):  
S. Bhunia ◽  
D.N. Bose
Keyword(s):  
Thermal Activation ◽  
Hydrogen Plasma ◽  
Minority Carrier Lifetime ◽  
Activation Energies ◽  
Band Edge ◽  
Band Edge Emission ◽  
Hydrogen Passivation ◽  
Deep Acceptor ◽  
Strong Band ◽  
Deep Acceptor Level

AbstractThe effects of hydrogen passivation in undoped p-ZnTe single crystals were studied by photoluminescence (PL) and photoconductivity (PC) measurements. Samples were exposed to r.f hydrogen plasma at 250 °C for different durations. Before passivation PL peaks were observed at 2.06 eV, 1.47 eV, 1.33 eV and 1.06 eV. After 60 minutes exposure, samples showed strong band edge green luminescence at 2.37 eV due to an exciton bound to a Cu acceptor. Further exposure to plasma resulted in disappearance of 2.37eV and 2.34 eV peaks due to damage. In PC studies the dark current was found to decrease by a factor of 70 on 60 minutes passivation. From the temperature dependence of PC gain, the minority carrier lifetime τn, was found to go through a maximum of 4.5 × 10−7 sec at 220 K before passivation. After 60 minutes exposure, τn, remained constant at 4.5 × 10−7 sec for T > 220 K and decreased for T < 220 K. The activation energies of τn, were determined and show marked changes on passivation for T > 220 K. Comparison between PL and PC studies showed that the deep acceptor level OTe responsible for emission at 2.06 eV is passivated giving rise to strong band edge emission at 2.37 eV while emission due to the midgap impurity levels at 1.47, 1.33 and 1.05 eV remained unaffected. The thermal activation energies of the PL peaks have also been determined and allow the construction of a defect energy level diagram for ZnTe.

scholarly journals Electronic structure and anomalous band-edge absorption feature in multiferroicMnWO4: An optical spectroscopic study

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
Woo Seok Choi ◽  
K. Taniguchi ◽  
S. J. Moon ◽  
S. S. A. Seo ◽  
T. Arima ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Study ◽  
Band Edge ◽  
Absorption Feature ◽  
Edge Absorption

Synthesis and optical characterization of a high-quality ZnS substrate for optoelectronics and UV solar-energy conversion

RSC Advances ◽  
2016 ◽  
Vol 6 (84) ◽  
pp. 81053-81059 ◽  
Author(s):  
Ching-Hwa Ho ◽  
Min-Han Lin
Keyword(s):  
Solar Energy ◽  
Energy Conversion ◽  
Optical Characterization ◽  
Band Edge ◽  
Band Edge Emission ◽  
High Grade ◽  
Edge Emission ◽  
High Quality ◽  
Strong Band

A high-grade cubic ZnS substrate crystal with longer range order and a strong band-edge emission was clearly demonstrated.

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