Schottky Barrier‐Controlled Black Phosphorus/Perovskite Phototransistors with Ultrahigh Sensitivity and Fast Response

Small ◽  
2019 ◽  
Vol 15 (25) ◽  
pp. 1901004 ◽  
Author(s):  
Xuming Zou ◽  
Yuanzhe Li ◽  
Guanqi Tang ◽  
Peng You ◽  
Feng Yan
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Black Phosphorus ◽  
Ultrahigh Sensitivity

Ultrahigh Sensitivity Micro-cliff Graphene Wearable Pressure Sensor Made by Instant Flash Light Exposure

Nanoscale ◽  
2021 ◽  
Author(s):  
Yachu Zhang ◽  
Han Lin ◽  
Fei Meng ◽  
Huai Liu ◽  
David Mesa ◽  
...  
Keyword(s):  
Health Monitoring ◽  
Pressure Sensor ◽  
Biomedical Applications ◽  
Light Exposure ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Fast Response ◽  
Highly Sensitive ◽  
Ultrahigh Sensitivity ◽  
Sensitive Pressure

Wearable and highly sensitive pressure sensors are of great importance for robotics, health monitoring and biomedical applications. Simultaneously achieving high sensitivity within a broad working range, fast response time (within...

Fast-response photodetectors with a large active area, based on Schottky-barrier semiconductor structures

1996 ◽  
Vol 26 (3) ◽  
pp. 278-280 ◽  
Author(s):  
S V Averin ◽  
Yurii V Gulyaev ◽  
M D Dmitriev ◽  
V T Potapov ◽  
R Sachot
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Active Area ◽  
Semiconductor Structures ◽  
Large Active Area

scholarly journals How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

ACS Omega ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 4173-4179 ◽  
Author(s):  
Lingming Yang ◽  
Adam Charnas ◽  
Gang Qiu ◽  
Yu-Ming Lin ◽  
Chun-Chieh Lu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Black Phosphorus ◽  
Semiconductor Contact

Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions

2021 ◽  
Vol 130 ◽  
pp. 114702
Author(s):  
Wei Li ◽  
Jinlei Wei ◽  
Baoan Bian ◽  
Bin Liao ◽  
Guoliang Wang
Keyword(s):  
Schottky Barrier ◽  
Black Phosphorus ◽  
Two Dimensional

Power high-voltage and fast response Schottky barrier diamond diodes

2015 ◽  
Vol 57 ◽  
pp. 32-36 ◽  
Author(s):  
V.D. Blank ◽  
V.S. Bormashov ◽  
S.A. Tarelkin ◽  
S.G. Buga ◽  
M.S. Kuznetsov ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Fast Response

AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity

1998 ◽  
Vol 73 (15) ◽  
pp. 2146-2148 ◽  
Author(s):  
E. Monroy ◽  
F. Calle ◽  
E. Muñoz ◽  
F. Omnès ◽  
P. Gibart ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Fast Response

scholarly journals Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashish V. Penumatcha ◽  
Ramon B. Salazar ◽  
Joerg Appenzeller
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Black Phosphorus ◽  
Oxide Semiconductor ◽  
Thin Body ◽  
Barrier Heights ◽  
Substitutional Doping ◽  
Low Dimensional ◽  
Schottky Barrier Mosfet

Abstract Owing to the difficulties associated with substitutional doping of low-dimensional nanomaterials, most field-effect transistors built from carbon nanotubes, two-dimensional crystals and other low-dimensional channels are Schottky barrier MOSFETs (metal-oxide-semiconductor field-effect transistors). The transmission through a Schottky barrier-MOSFET is dominated by the gate-dependent transmission through the Schottky barriers at the metal-to-channel interfaces. This makes the use of conventional transistor models highly inappropriate and has lead researchers in the past frequently to extract incorrect intrinsic properties, for example, mobility, for many novel nanomaterials. Here we propose a simple modelling approach to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state. In particular, after validating the model through the analysis of a set of ultra-thin silicon field-effect transistor data, we have successfully applied our approach to extract Schottky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.

Sandwich structured dielectrics for air-stable and flexible low-voltage organic transistors in ultrasensitive pressure sensing

2020 ◽  
Vol 4 (5) ◽  
pp. 1459-1470 ◽  
Author(s):  
Yue Jiang ◽  
Ziyang Liu ◽  
Zhigang Yin ◽  
Qingdong Zheng
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Pressure Sensors ◽  
Fast Response ◽  
Organic Transistors ◽  
Pressure Sensing ◽  
Detection Range ◽  
Ultrahigh Sensitivity

A novel type of polymer sandwich dielectric is developed for air-stable, hysteresis-free and flexible OTFTs which can be used for low-power pressure sensors with ultrahigh sensitivity, wide detection range and fast response.

A black phosphorus humidity sensor with high sensitivity and fast response

2016 ◽  
Author(s):  
Wen-Hao Chen ◽  
Jian-Qiu Huang ◽  
Chong-Yang Zhu ◽  
Qing-An Huang
Keyword(s):  
Humidity Sensor ◽  
High Sensitivity ◽  
Fast Response ◽  
Black Phosphorus
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