scholarly journals How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

ACS Omega ◽  
2017 ◽  
Vol 2 (8) ◽  
pp. 4173-4179 ◽  
Author(s):  
Lingming Yang ◽  
Adam Charnas ◽  
Gang Qiu ◽  
Yu-Ming Lin ◽  
Chun-Chieh Lu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Black Phosphorus ◽  
Semiconductor Contact

scholarly journals The Effect of Metal-Semiconductor Contact on the Transient Photovoltaic Characteristic of HgCdTe PV Detector

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
Haoyang Cui ◽  
Yongpeng Xu ◽  
Junjie Yang ◽  
Naiyun Tang ◽  
Zhong Tang
Keyword(s):  
Schottky Barrier ◽  
Response Curve ◽  
Photoelectric Effect ◽  
Ultrafast Laser ◽  
Characteristic Parameters ◽  
Pv Array ◽  
Array Electrode ◽  
Photo Response ◽  
Positive Peak ◽  
Semiconductor Contact

The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak. By employing a combined theoretical model ofpnjunction and Schottky potential, this photo-response polarity changing curves can be interpreted well. An obvious decreasing of ratio of negative valley to positive peak can be realized by limiting the illumination area of the array electrode. This shows that the photoelectric effect of Schottky barrier at metal-semiconductor (M/S) interface is suppressed, which will verify the correctness of the model. The characteristic parameters of transient photo-response induced fromp-njunction and Schottky potential are extracted by fitting the response curve utilizing this model. It shows that the negative PV response induced by the Schottky barrier decreases the positive photovoltage generated by thepnjunction.

Schottky Barrier‐Controlled Black Phosphorus/Perovskite Phototransistors with Ultrahigh Sensitivity and Fast Response

Small ◽  
2019 ◽  
Vol 15 (25) ◽  
pp. 1901004 ◽  
Author(s):  
Xuming Zou ◽  
Yuanzhe Li ◽  
Guanqi Tang ◽  
Peng You ◽  
Feng Yan
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Black Phosphorus ◽  
Ultrahigh Sensitivity

scholarly journals First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

RSC Advances ◽  
2020 ◽  
Vol 10 (25) ◽  
pp. 14746-14752
Author(s):  
Ran Xu ◽  
Na Lin ◽  
Zhitai Jia ◽  
Yueyang Liu ◽  
Haoyuan Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
First Principles ◽  
High Performance ◽  
Schottky Barrier Height ◽  
Electronic Devices ◽  
Schottky Barriers ◽  
First Principles Study ◽  
Metal Interfaces ◽  
Semiconductor Contact

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices.

Piezoelectric Materials as Sonodynamic Sensitizers to Safely Ablate Tumors: A Case Study Using Black Phosphorus

2020 ◽  
Vol 11 (4) ◽  
pp. 1228-1238 ◽  
Author(s):  
Zhiyuan Li ◽  
Taiming Zhang ◽  
Feng Fan ◽  
Feng Gao ◽  
Hengxing Ji ◽  
...  
Keyword(s):  
Piezoelectric Materials ◽  
Black Phosphorus

scholarly journals Effects of interface morphology on Schottky-barrier heights: A case study on Al/GaAs(001)

1997 ◽  
Vol 56 (23) ◽  
pp. 14921-14924 ◽  
Author(s):  
A. Ruini ◽  
R. Resta ◽  
S. Baroni
Keyword(s):  
Schottky Barrier ◽  
Interface Morphology ◽  
Barrier Heights

scholarly journals Autonomous Self-Healing Strategy for Stable Sodium-Ion Battery: A Case Study of Black Phosphorus Anodes

2021 ◽  
Vol 13 (11) ◽  
pp. 13170-13182
Author(s):  
D. Callegari ◽  
S. Colombi ◽  
A. Nitti ◽  
C. Simari ◽  
I. Nicotera ◽  
...  
Keyword(s):  
Black Phosphorus ◽  
Sodium Ion ◽  
Sodium Ion Battery ◽  
Self Healing

Tunable Schottky barrier in planar two-dimensional metal/black phosphorus heterojunctions

2021 ◽  
Vol 130 ◽  
pp. 114702
Author(s):  
Wei Li ◽  
Jinlei Wei ◽  
Baoan Bian ◽  
Bin Liao ◽  
Guoliang Wang
Keyword(s):  
Schottky Barrier ◽  
Black Phosphorus ◽  
Two Dimensional
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