AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity

1998 ◽  
Vol 73 (15) ◽  
pp. 2146-2148 ◽  
Author(s):  
E. Monroy ◽  
F. Calle ◽  
E. Muñoz ◽  
F. Omnès ◽  
P. Gibart ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Fast Response

Schottky Barrier‐Controlled Black Phosphorus/Perovskite Phototransistors with Ultrahigh Sensitivity and Fast Response

Small ◽  
2019 ◽  
Vol 15 (25) ◽  
pp. 1901004 ◽  
Author(s):  
Xuming Zou ◽  
Yuanzhe Li ◽  
Guanqi Tang ◽  
Peng You ◽  
Feng Yan
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Black Phosphorus ◽  
Ultrahigh Sensitivity

Fast-response photodetectors with a large active area, based on Schottky-barrier semiconductor structures

1996 ◽  
Vol 26 (3) ◽  
pp. 278-280 ◽  
Author(s):  
S V Averin ◽  
Yurii V Gulyaev ◽  
M D Dmitriev ◽  
V T Potapov ◽  
R Sachot
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Active Area ◽  
Semiconductor Structures ◽  
Large Active Area

Power high-voltage and fast response Schottky barrier diamond diodes

2015 ◽  
Vol 57 ◽  
pp. 32-36 ◽  
Author(s):  
V.D. Blank ◽  
V.S. Bormashov ◽  
S.A. Tarelkin ◽  
S.G. Buga ◽  
M.S. Kuznetsov ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Fast Response

Fast-response self-powered solar-blind photodetector based on Pt/β-Ga2O3 schottky barrier diodes

Optik ◽  
2021 ◽  
pp. 167715
Author(s):  
Bo Peng ◽  
Lei Yuan ◽  
Hongpeng Zhang ◽  
Hongjuan Cheng ◽  
Shengnan Zhang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Fast Response ◽  
Schottky Barrier Diodes ◽  
Solar Blind ◽  
Self Powered

scholarly journals Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts

RSC Advances ◽  
2019 ◽  
Vol 9 (18) ◽  
pp. 10017-10023 ◽  
Author(s):  
Sikandar Aftab ◽  
Muhammad Waqas Iqbal ◽  
Amir Muhammad Afzal ◽  
M. Farooq Khan ◽  
Ghulam Hussain ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Power Management ◽  
Mobile Communication ◽  
Fast Response ◽  
Schottky Junction ◽  
Schottky Barrier Diodes ◽  
Metal Contacts ◽  
Small Capacitance ◽  
Device Technology

Schottky-barrier diodes have great importance in power management and mobile communication because of their informal device technology, fast response and small capacitance.

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Compact and efficient gas diffusion electrodes based on nanoporous alumina membranes for microfuel cells and gas sensors

The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández
Keyword(s):  
Response Times ◽  
Hydrogen Oxidation ◽  
Fast Response ◽  
Gas Diffusion ◽  
Limiting Current ◽  
Gas Diffusion Electrodes ◽  
Nanoporous Alumina ◽  
Alumina Membranes ◽  
Current Densities ◽  
Microfuel Cells

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes
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