High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure

Small ◽  
2018 ◽  
Vol 14 (9) ◽  
pp. 1703293 ◽  
Author(s):  
Yan Chen ◽  
Xudong Wang ◽  
Guangjian Wu ◽  
Zhen Wang ◽  
Hehai Fang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Photovoltaic Detector

scholarly journals Optoelectronics: High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure (Small 9/2018)

Small ◽  
2018 ◽  
Vol 14 (9) ◽  
pp. 1870038 ◽  
Author(s):  
Yan Chen ◽  
Xudong Wang ◽  
Guangjian Wu ◽  
Zhen Wang ◽  
Hehai Fang ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Photovoltaic Detector

Low Lattice Mismatch InSe–Se Vertical Van der Waals Heterostructure for High‐performance Transistors via Strong Fermi‐Level Depinning

Small Methods ◽  
2020 ◽  
Vol 4 (8) ◽  
pp. 2000238
Author(s):  
Jianfeng Jiang ◽  
Fanqi Meng ◽  
Qilin Cheng ◽  
Aizhu Wang ◽  
Yuke Chen ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Lattice Mismatch ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

2020 ◽  
Vol 12 (4) ◽  
pp. 5106-5112 ◽  
Author(s):  
Gwang Hyuk Shin ◽  
Geon-Beom Lee ◽  
Eun-Su An ◽  
Cheolmin Park ◽  
Hyeok Jun Jin ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Logic Gates ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor

High performance graphene/semiconductor van der Waals heterostructure optoelectronic devices

Nano Energy ◽  
2017 ◽  
Vol 40 ◽  
pp. 122-148 ◽  
Author(s):  
Shisheng Lin ◽  
Yanghua Lu ◽  
Juan Xu ◽  
Sirui Feng ◽  
Jianfeng Li
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Van Der Waals Heterostructure

Strain modulation on graphene/ZnO nanowire mixed-dimensional van der Waals heterostructure for high-performance photosensor

Nano Research ◽  
2017 ◽  
Vol 10 (10) ◽  
pp. 3476-3485 ◽  
Author(s):  
Shuo Liu ◽  
Qingliang Liao ◽  
Zheng Zhang ◽  
Xiankun Zhang ◽  
Shengnan Lu ◽  
...  
Keyword(s):  
High Performance ◽  
Van Der Waals ◽  
Zno Nanowire ◽  
Van Der Waals Heterostructure ◽  
Strain Modulation

scholarly journals A Strategy for High-Performance Photodetector based on Graphene-Si heterostructure

2020 ◽  
Vol 213 ◽  
pp. 02014
Author(s):  
Tianying He ◽  
Changyong Lan ◽  
Chun Li ◽  
Sihan Zhou ◽  
Yi Yin
Keyword(s):  
High Performance ◽  
Collection Efficiency ◽  
Van Der Waals ◽  
High Sensitivity ◽  
Response Speed ◽  
Fast Response ◽  
Van Der Waals Heterostructure ◽  
Mapping Technology ◽  
Peak Sensitivity ◽  
Heterostructure Devices

Van der Waals heterostructure shows promising applications in next generation optoelectronics. As a kind of van der Waals heterostructure, graphene/silicon (Gr/Si) based heterostructure devices have been demonstrated as high performance photodetectors. Here, we studied the origin of the high performance of Gr/Si photodetectors based on photocurrent mapping technology. According to photocurrent mapping, the photocurrent in the Gr/Si and Gr/SiO2/Si area nearing the Si window edge is higher than that in other positions, which is attributed to the highly effective collection efficiency of photocarriers. A device with size of Gr/Si region (r=7.4 μm) and Gr/SiO2/Si region (L=6.1 μm) shows high sensitivity and a broadband photoresponse in the range from 420 to 1000 nm with the peak sensitivity of 52 A/W at 780 nm, and fast response speed with rise time of 16 μs and decay time of 52 μs. Our study provides a strategy for the design of high photoresponsivity Gr/Si based devices.

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