High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure

2020 ◽  
Vol 12 (4) ◽  
pp. 5106-5112 ◽  
Author(s):  
Gwang Hyuk Shin ◽  
Geon-Beom Lee ◽  
Eun-Su An ◽  
Cheolmin Park ◽  
Hyeok Jun Jin ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Logic Gates ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor

The electronic applications of stable diradicaloids: present and future

2018 ◽  
Vol 6 (42) ◽  
pp. 11232-11242 ◽  
Author(s):  
Xiaoguang Hu ◽  
Wenxiang Wang ◽  
Dongsheng Wang ◽  
Yonghao Zheng
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Logic Gates ◽  
Linear Optics ◽  
Non Linear Optics ◽  
Potential Applications ◽  
Future Potential ◽  
Effect Transistor ◽  
Organic Batteries

Diradicaloids are promising materials for organic electronics and nonlinear optics due to their unique optical, electronic and magnetic properties. High performance organic field-effect transistor and photodetector based on diradicaloids have been achieved. Future potential applications in organic batteries, memory, logic gates and non-linear optics are expected.

scholarly journals Van der Waals Heterostructure Based Field Effect Transistor Application

Crystals ◽  
2017 ◽  
Vol 8 (1) ◽  
pp. 8 ◽  
Author(s):  
Jingyu Li ◽  
Xiaozhang Chen ◽  
David Zhang ◽  
Peng Zhou
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor

A transverse tunnelling field-effect transistor made from a van der Waals heterostructure

2020 ◽  
Vol 3 (2) ◽  
pp. 106-112 ◽  
Author(s):  
Xiong Xiong ◽  
Mingqiang Huang ◽  
Ben Hu ◽  
Xuefei Li ◽  
Fei Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor

scholarly journals Proximity effects in graphene and ferromagnetic CrBr3 van der Waals heterostructures

2019 ◽  
Vol 21 (46) ◽  
pp. 25788-25796 ◽  
Author(s):  
Sushant Kumar Behera ◽  
Mayuri Bora ◽  
Sapta Sindhu Paul Chowdhury ◽  
Pritam Deb
Keyword(s):  
Proximity Effect ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Van Der Waals ◽  
Proximity Effects ◽  
Graphene Monolayer ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Effect Transistor ◽  
Magnetic Proximity Effect

Schematic of the magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer, induced by its interaction with a two-dimensional ferromagnet (CrBr3) for designing a single-gate field effect transistor.

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

scholarly journals Gold Nanoparticle-Mediated Noncovalent Functionalization of Graphene for Field-Effect Transistor

2021 ◽  
Author(s):  
Dongha Shin ◽  
Hwa Rang Kim ◽  
Byung Hee Hong
Keyword(s):  
Transport Properties ◽  
Gold Nanoparticle ◽  
Electrical Transport ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Electrical Transport Properties ◽  
Noncovalent Functionalization ◽  
Effect Transistor

Since of its first discovery, graphene has attracted much attention because of the unique electrical transport properties that can be applied to high-performance field-effect transistor (FET). However, mounting chemical functionalities...

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