scholarly journals Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

2014 ◽  
Vol 105 (6) ◽  
pp. 063106 ◽  
Author(s):  
Arseniy Lartsev ◽  
Tom Yager ◽  
Tobias Bergsten ◽  
Alexander Tzalenchuk ◽  
T. J. B. M Janssen ◽  
...  
Keyword(s):  
Corona Discharge ◽  
Carrier Density ◽  
Dirac Point ◽  
Epitaxial Graphene

Dry Techniques for Epitaxial Graphene Transfer

2010 ◽  
Vol 1259 ◽  
Author(s):  
Joshua D. Caldwell ◽  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Glenn G. Jernigan ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Large Area ◽  
Wafer Scale ◽  
Thermal Release ◽  
Graphene Films ◽  
Graphene Transfer ◽  
Van Der Pauw

AbstractEpitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.

scholarly journals Carrier Relaxation in Epitaxial Graphene Photoexcited Near the Dirac Point

2011 ◽  
Vol 107 (23) ◽  
Author(s):  
S. Winnerl ◽  
M. Orlita ◽  
P. Plochocka ◽  
P. Kossacki ◽  
M. Potemski ◽  
...  
Keyword(s):  
Dirac Point ◽  
Epitaxial Graphene ◽  
Carrier Relaxation

scholarly journals Low Carrier Density Epitaxial Graphene Devices On SiC

Small ◽  
2014 ◽  
Vol 11 (1) ◽  
pp. 90-95 ◽  
Author(s):  
Yanfei Yang ◽  
Lung-I. Huang ◽  
Yasuhiro Fukuyama ◽  
Fan-Hung Liu ◽  
Mariano A. Real ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Graphene Devices

scholarly journals Physics of a disordered Dirac point in epitaxial graphene from temperature-dependent magnetotransport measurements

2015 ◽  
Vol 92 (7) ◽  
Author(s):  
J. Huang ◽  
J. A. Alexander-Webber ◽  
A. M. R. Baker ◽  
T. J. B. M. Janssen ◽  
A. Tzalenchuk ◽  
...  
Keyword(s):  
Dirac Point ◽  
Epitaxial Graphene ◽  
Temperature Dependent

scholarly journals Gateless and reversible Carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl

Carbon ◽  
2019 ◽  
Vol 142 ◽  
pp. 468-474 ◽  
Author(s):  
Albert F. Rigosi ◽  
Mattias Kruskopf ◽  
Heather M. Hill ◽  
Hanbyul Jin ◽  
Bi-Yi Wu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Epitaxial Graphene ◽  
Chromium Tricarbonyl ◽  
Graphene Devices

Berry phase and Landau levels in epitaxial graphene

2016 ◽  
Vol 30 (21) ◽  
pp. 1650156
Author(s):  
Z. Z. Alisultanov
Keyword(s):  
Experimental Data ◽  
Simple Model ◽  
Dirac Point ◽  
Berry Phase ◽  
Epitaxial Graphene ◽  
Landau Levels ◽  
Complete Agreement ◽  
Semiconductor Substrate ◽  
Semiclassical Approach

Within the framework of a simple model, we investigated the Berry phase of epitaxial graphene (EG) formed on a semiconductor substrate. We have shown that this value is equal to [Formula: see text] near the Dirac point. This result is in complete agreement with the experimental data. We have shown that the Berry phase of epitaxial graphene may differ from [Formula: see text] far away from Dirac point. In addition, we investigated the Landau levels (LLs) in the epitaxial graphene within the framework of the semiclassical approach.

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