Application of surface analysis in study on removal mechanism and abrasive selection during fused silica chemical mechanical polishing

2019 ◽  
Vol 51 (5) ◽  
pp. 576-583 ◽  
Author(s):  
Gaopan Chen ◽  
Haimei Luo ◽  
Chengxi Kang ◽  
Guihai Luo ◽  
Yan Zhou ◽  
...  
Keyword(s):  
Surface Analysis ◽  
Chemical Mechanical Polishing ◽  
Fused Silica ◽  
Mechanical Polishing ◽  
Removal Mechanism

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Characteristics of Slurry Recycling in Chemical Mechanical Polishing (CMP) of Fused Silica (FS)

2019 ◽  
Vol 8 (3) ◽  
pp. P196-P201
Author(s):  
Yan Zhou ◽  
Haimei Luo ◽  
Guihai Luo ◽  
Chengxi Kang ◽  
Gaopan Chen ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fused Silica ◽  
Mechanical Polishing

CHEMICAL MECHANICAL POLISHING AND ITS MECHANISM ON YTTERBIUM-DOPED MIXED SESQUIOXIDES (Yb:LuScO3)

2020 ◽  
pp. 2050036
Author(s):  
YUANYUAN FANG ◽  
HONGBO HE ◽  
LUNZHE WU ◽  
ZHE WANG ◽  
AIHUAN DUN ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Scanning Probe ◽  
Basic Material ◽  
Atomic Step ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Material Removal Model ◽  
Removal Model

In this paper, Yb:LuScO3 crystal was processed by chemical mechanical polishing (CMP), and the surface roughness of 0.18[Formula: see text]nm was obtained. The atomic step structures of these sesquioxide crystals are successfully characterized by AFM scanning probe technology. Through several CMP experiments, the basic material removal mechanism of a ytterbium-doped LuScO3 crystal during CMP is studied. Based on the findings, a material removal model is established. The results of this study provide ideas for the study of CMP, crystal growth and epitaxy.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Study on Chemical Mechanical Polishing Mechanism of LiTaO3 Wafer

2006 ◽  
Vol 304-305 ◽  
pp. 310-314
Author(s):  
Xin Wei ◽  
Hui Yuan ◽  
H.W. Du ◽  
Wei Xiong ◽  
Rui Wei Huang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Acoustic Signals ◽  
Mechanical Action ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Mechanical Loads ◽  
Crystal Wafer

In this paper, the scratching processes by a diamond indentor under the loads linearly increased from zero were studied to assess the mechanical behavior of LiTaO3 crystal wafer. Material removal mechanism of LiTaO3 crystal by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of LiTaO3 wafers. The chemical mechanical polishing (CMP) processes of LiTaO3 wafers were analyzed in detail according to the observation and measurement of the polished surfaces of LiTaO3 wafers with SEM and XRD. The research results show that there exist four regimes along the scratched groove with the increasing of down force in a scratching process of LiTaO3 crystal wafer, and the critical load for each regime is affected by the loading speed and final load, etc. When H2O2 and KOH are added into the polishing slurry, the material of LiTaO3 wafer is removed by chemical reaction and mechanical action sequentially in the CMP processes, and the material removal rate increases while the surface roughness is improved.

scholarly journals Investigation of the Chemical Residuals on the Fused Silica during Chemical Mechanical Polishing

2018 ◽  
Vol 3 (31) ◽  
pp. 8930-8935 ◽  
Author(s):  
Li Xu ◽  
Gaopan Chen ◽  
Haimei Luo ◽  
Xiaolei Shi ◽  
Guihai Luo ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Fused Silica ◽  
Mechanical Polishing
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