An effect of measurement conditions on the depth resolution for low-energy dual-beam depth profiling using TOF-SIMS

2013 ◽  
Vol 45 (8) ◽  
pp. 1261-1265 ◽  
Author(s):  
Atsushi Murase ◽  
Takuya Mitsuoka ◽  
Mitsuhiro Tomita ◽  
Hisataka Takenaka ◽  
Hiromi Morita
2004 ◽  
Vol 231-232 ◽  
pp. 749-753 ◽  
Author(s):  
J. Brison ◽  
T. Conard ◽  
W. Vandervorst ◽  
L. Houssiau

2002 ◽  
Vol 8 (3) ◽  
pp. 216-226 ◽  
Author(s):  
Geert Verlinden ◽  
Renaat Gijbels ◽  
Ingrid Geuens

The technique of imaging time-of-flight secondary ion mass spectrometry (TOF-SIMS) and dual beam depth profiling has been used to study the composition of the surface of tabular silver halide microcrystals. Analysis of individual microcrystals with a size well below 1 μm from a given emulsion is possible. The method is successfully applied for the characterization of silver halide microcrystals with subpercent global iodide concentrations confined in surface layers with a thickness below 5 nm. The developed TOF-SIMS analytical procedure is explicitly demonstrated for the molecular imaging of adsorbed thiocyanate layers (SCN) at crystal surfaces of individual crystals and for the differentiation of iodide conversion layers synthesized with KI and with AgI micrates (nanocrystals with a size between 10 and 50 nm). It can be concluded that TOF-SIMS as a microanalytical, surface-sensitive technique has some unique properties over other analytical techniques for the study of complex structured surface layers of silver halide microcrystals. This offers valuable information to support the synthesis of future photographic emulsions.


1985 ◽  
Vol 54 ◽  
Author(s):  
S. Ingrey ◽  
J.P.D. Cook

A dual ion gun system has been proposed (D.E. Sykes et al, Appl. Surf. Sci. 5(1980)103) to reduce texturing and improve depth resolution during Auger sputter depth profiling. We have evaluated this ion gun configuration by profiling a variety of multilayer structures. With careful alignment of the guns, we have obtained a dramatic decrease in ion-induced texturing often seen when a single ion gun is used. This effect was particularly pronounced for polycrystalline Al films on Si where an order of magnitude improvement in depth resolution was achieved. Further refinements of the technique include the use of low energy (IkeV) grazing incidence xenon ions and a small electron beam probe area. Depth profiles obtained from Ni/Cr, W/Si, and GaAs/GaAlAs multilayer structures will also be discussed.


2004 ◽  
Vol 2 ◽  
pp. 24-27
Author(s):  
Hyung-Ik Lee ◽  
Dae Won Moon ◽  
Suhk Kun Oh ◽  
Hee Jae Kang ◽  
Hyun Kyong Kim ◽  
...  

2012 ◽  
Vol 45 (1) ◽  
pp. 171-174 ◽  
Author(s):  
D. Rading ◽  
R. Moellers ◽  
H.-G. Cramer ◽  
E. Niehuis

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