Primary ion implantation and recoil implantation effects in Cs depth profiling of thin metallic layers on LiNbO3

2012 ◽  
Vol 45 (1) ◽  
pp. 111-112
Author(s):  
M. V. Ciampolillo ◽  
C. Sada
Keyword(s):  
Ion Implantation ◽  
Depth Profiling ◽  
Recoil Implantation

scholarly journals Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 131
Author(s):  
Ying Song ◽  
Zongwei Xu ◽  
Tao Liu ◽  
Mathias Rommel ◽  
Hong Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Epitaxial Layer ◽  
Depth Profiling ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Objective Lens ◽  
Substrate Layer ◽  
Depth Analysis ◽  
Confocal Raman ◽  
Ion Implanted

For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Improved depth profiling with slow positrons of ion implantation-induced damage in silicon

2003 ◽  
Vol 94 (7) ◽  
pp. 4382-4388 ◽  
Author(s):  
M. Fujinami ◽  
T. Miyagoe ◽  
T. Sawada ◽  
T. Akahane
Keyword(s):  
Ion Implantation ◽  
Depth Profiling

Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substrates

1993 ◽  
Vol 233 (1-2) ◽  
pp. 199-202 ◽  
Author(s):  
S. Lynch ◽  
M. Murtagh ◽  
G.M. Crean ◽  
P.V. Kelly ◽  
M. O'Connor ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Depth Profiling ◽  
Non Destructive

X-Ray Induced Depth Profiling of Ion Implantations into Various Semiconductor Materials

2012 ◽  
Vol 195 ◽  
pp. 274-276 ◽  
Author(s):  
Philipp Hönicke ◽  
Matthias Müller ◽  
Burkhard Beckhoff
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Measurement Techniques ◽  
Depth Profiling ◽  
Low Energy ◽  
Semiconductor Materials ◽  
Leakage Currents ◽  
X Ray ◽  
20 Nm

The continuing shrinking of the component dimensions in ULSI technology requires junction depths in the 20-nm regime and below to avoid leakage currents. These ultra shallow dopant distributions can be formed by ultra-low energy (ULE) ion implantation. However, accurate measurement techniques for ultra-shallow dopant profiles are required in order to characterize ULE implantation and the necessary rapid thermal annealing (RTA) processes.

Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

1999 ◽  
Vol 75 (18) ◽  
pp. 2791-2793 ◽  
Author(s):  
Mirang Yoon ◽  
B. C. Larson ◽  
J. Z. Tischler ◽  
T. E. Haynes ◽  
J.-S. Chung ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Cross Section ◽  
Depth Profiling ◽  
X Ray ◽  
Defect Clusters

Thermal Behaviour of Implanted Nitrogen and Accumulated Hydrogen in Titanium

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Soltani-Farshi ◽  
H. Baumann ◽  
D. Rück ◽  
G. Walter ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Depth Distribution ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Nitrogen Ion Implantation ◽  
X Ray ◽  
Depth Profiles ◽  
Hydrogen Accumulation ◽  
Nitrogen Ion

ABSTRACTThe influence of nitrogen ion implantation on the hydrogen accumulation in titanium was investigated as function of sample temperature and ion fluence. 150 keV nitrogen (15N) ions were implanted at different sample temperatures up to 700°C with fluences ranging from 1 × 1017 to 1 × 1018 ions/cm2. The amount of accumulated hydrogen and its depth distribution was measured quantitatively with the 15N depth profiling method. The implanted 15N depth profiles were measured by the reverse reaction 15N(p, αγ)12C at 429 keV. The binary phases of the implanted nitrogen with titanium are detected by grazing incidence x-ray diffraction. The results are compared with those obtained for samples implanted at RT and subsequently thermally treated.

Depth Profiling of Al Ion-Implantation Damage in SiC Crystals by Cathodoluminescence Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 615-618 ◽  
Author(s):  
Takeshi Mitani ◽  
Ryo Hattori ◽  
Masanobu Yoshikawa
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Depth Profiling ◽  
High Density ◽  
Cross Sectional ◽  
Implantation Damage ◽  
Cathodoluminescence Spectroscopy ◽  
Deep Region ◽  
Region 10 ◽  
Activation Annealing

Cross-sectional CL measurements have been performed on the cleaved surface of the Al-ion implanted 4H-SiC. The strong L1 luminescence that originates from the DI defect has been observed even in the deep region (~10 μm) where implanted ions do not penetrate. In the implanted layer, CL results show that high-density non-radiative defects remain even after activation annealing. Generation of the DI defect in the deep region is presumably attributed to the diffusion of point defects from the implanted layer.

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