Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at%

2012 ◽  
Vol 45 (1) ◽  
pp. 369-372
Author(s):  
J. C. Dupuy ◽  
G. Prudon ◽  
C. Dubois ◽  
R. Kögler ◽  
S. Akhmadaliev ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Self Consistent ◽  
Ion Yields ◽  
Secondary Ion

Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

2010 ◽  
Vol 43 (1-2) ◽  
pp. 137-140 ◽  
Author(s):  
Jean-Claude Dupuy ◽  
Christiane Dubois ◽  
Gilles Prudon ◽  
Brice Gautier ◽  
Reinhard Kögler ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Comparative Method ◽  
Boron Doped ◽  
Doped Silicon ◽  
Ion Yields

In-depth Analysis of the Impurities in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
A. P. Kovarsky ◽  
V. S. Strykanov
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dynamic Range ◽  
Detection Limits ◽  
Background Level ◽  
Epitaxial Films ◽  
Depth Analysis ◽  
Lower Detection ◽  
Minimum Detection Level ◽  
Ion Yields ◽  
Secondary Ion

GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry (SIMS). Standard implanted samples were used to determine the appropriate analytical conditions for analysis of impurities. The dose and energy of implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen so the maximum impurity concentration was not more than 1020 atoms/cm3. The optimum analysis conditions were ascertained from the standards for each element, and the detection limits were deduced from the background levels of the implantation profiles. We demonstate that lower detection limits of 1015 atoms/cm3 with a dynamic range 103 − 105 are possible. Zn and Cd have low ion yields, so the minimum detection level for these elements is the background level of the detector. The detection limits of the other elements are determined by the contamination of an initial GaN matrix.

A new experimental method for determining secondary ion yields from surfaces bombarded by complex heterogeneous ions

1990 ◽  
Vol 8 (3) ◽  
pp. 2265-2268 ◽  
Author(s):  
M. G. Blain ◽  
S. Della‐Negra ◽  
H. Joret ◽  
Y. Le Beyec ◽  
E. A. Schweikert
Keyword(s):  
Experimental Method ◽  
Ion Yields ◽  
Secondary Ion

Sputtering and secondary ion yields of metals subjected to oxygen ion bombardment

1982 ◽  
Vol 119 (1) ◽  
pp. L363-L369 ◽  
Author(s):  
Y. Taga ◽  
K. Inoue ◽  
K. Satta
Keyword(s):  
Ion Bombardment ◽  
Oxygen Ion ◽  
Ion Yields ◽  
Secondary Ion

scholarly journals Enhancing Secondary Ion Yields in Time of Flight-Secondary Ion Mass Spectrometry Using Water Cluster Primary Beams

2013 ◽  
Vol 85 (12) ◽  
pp. 5654-5658 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Andrew Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion
Sign in / Sign up

Export Citation Format

Share Document