Depth-profiling analysis of MOCVD-grown triple junction solar cells by SIMS

2010 ◽  
Vol 43 (1-2) ◽  
pp. 646-648 ◽  
Author(s):  
Helena Téllez ◽  
José M. Vadillo ◽  
Egbert Rodríguez Messmer ◽  
Javier Miguel-Sánchez ◽  
J. Javier Laserna
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Depth Profiling ◽  
Profiling Analysis

SIMS depth profiling analysis of halogens in CdTe/CdS/TSO solar cells using Cs2M+ cluster ions

2008 ◽  
Vol 255 (4) ◽  
pp. 1423-1426 ◽  
Author(s):  
O. Koudriavtseva ◽  
A. Morales-Acevedo ◽  
Yu. Kudriavtsev ◽  
S. Gallardo ◽  
R. Asomoza ◽  
...  
Keyword(s):  
Solar Cells ◽  
Depth Profiling ◽  
Cluster Ions ◽  
Profiling Analysis ◽  
Sims Depth Profiling

32.3 percent efficient triple junction GaInP2/GaAs/Ge concentrator solar cells

2000 ◽  
Author(s):  
D. Lillington ◽  
H. Cotal ◽  
J. Ermer ◽  
D. Friedman ◽  
T. Moriarty ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction

scholarly journals GaInP/GaAs/poly-Si Multi-Junction Solar Cells by in Metal Balls Bonding

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 726
Author(s):  
Ray-Hua Horng ◽  
Yu-Cheng Kao ◽  
Apoorva Sood ◽  
Po-Liang Liu ◽  
Wei-Cheng Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
Triple Junction ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Metal Line ◽  
Solar Simulator ◽  
Junction Solar Cell

In this study, a mechanical stacking technique has been used to bond together the GaInP/GaAs and poly-silicon (Si) solar wafers. A GaInP/GaAs/poly-Si triple-junction solar cell has mechanically stacked using a low-temperature bonding process which involves micro metal In balls on a metal line using a high-optical-transmission spin-coated glue material. Current–voltage measurements of the GaInP/GaAs/poly-Si triple-junction solar cells have carried out at room temperature both in the dark and under 1 sun with 100 mW/cm2 power density using a solar simulator. The GaInP/GaAs/poly-Si triple-junction solar cell has reached an efficiency of 24.5% with an open-circuit voltage of 2.68 V, a short-circuit current density of 12.39 mA/cm2, and a fill-factor of 73.8%. This study demonstrates a great potential for the low-temperature micro-metal-ball mechanical stacking technique to achieve high conversion efficiency for solar cells with three or more junctions.

Solution-Processed Monolithic All-Perovskite Triple-Junction Solar Cells with Efficiency Exceeding 20%

2020 ◽  
Vol 5 (9) ◽  
pp. 2819-2826 ◽  
Author(s):  
Ke Xiao ◽  
Jin Wen ◽  
Qiaolei Han ◽  
Renxing Lin ◽  
Yuan Gao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Solution Processed

SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell

2014 ◽  
Vol 46 (S1) ◽  
pp. 341-343
Author(s):  
Tae Woon Kim ◽  
Hyun Jeong Baek ◽  
Jong Shik Jang ◽  
Seung Mi Lee ◽  
Kyung Joong Kim
Keyword(s):  
Solar Cell ◽  
Depth Profiling ◽  
Profiling Analysis ◽  
Sims Depth Profiling

POSS Polyimide Sealed Flexible Triple‐Junction GaAs Thin‐Film Solar Cells for Space Applications

2021 ◽  
pp. 2100603
Author(s):  
Min Qian ◽  
Xiaojun Mao ◽  
Min Wu ◽  
Zhangyi Cao ◽  
Qing Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Triple Junction ◽  
Thin Film Solar Cells ◽  
Space Applications

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Sign in / Sign up

Export Citation Format

Share Document