Investigation of the electronic structure of the phosphorus-doped Si and SiO2:Si quantum dots by XPS and HREELS methods

2004 ◽  
Vol 36 (8) ◽  
pp. 959-962 ◽  
Author(s):  
A. I. Kovalev ◽  
D. L. Wainstein ◽  
D. I. Tetelbaum ◽  
W. Hornig ◽  
Yu. N. Kucherehko
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Phosphorus Doped ◽  
Si Quantum Dots

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Electronic structure of Ge/Si quantum dots

2002 ◽  
Vol 13 (1) ◽  
pp. 75-80 ◽  
Author(s):  
A V Dvurechenskii ◽  
A V Nenashev ◽  
A I Yakimov
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Si Quantum Dots

Role of the interface for the electronic structure of Si quantum dots

2008 ◽  
Vol 78 (3) ◽  
Author(s):  
Dirk König ◽  
James Rudd ◽  
Martin A. Green ◽  
Gavin Conibeer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Si Quantum Dots
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