Electronic structure study of ion-implanted Si quantum dots in a SiO2matrix: Analysis of quantum confinement theories

2011 ◽  
Vol 83 (3) ◽  
Author(s):  
E. G. Barbagiovanni ◽  
L. V. Goncharova ◽  
P. J. Simpson
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Quantum Confinement ◽  
Structure Study ◽  
Si Quantum Dots ◽  
Ion Implanted

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Quantum Confinement Explains Pump-Dependent Luminescence from Butyl-Terminated Si Quantum Dots

2019 ◽  
Vol 123 (45) ◽  
pp. 27854-27861
Author(s):  
Valentin V. Nikolaev ◽  
Mikhail A. Kaliteevski ◽  
Nikita S. Averkiev
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Si Quantum Dots

The enhancement of luminescence in ion implanted Si quantum dots in SiO2matrix by means of dose alignment and doping

2000 ◽  
Vol 11 (4) ◽  
pp. 295-297 ◽  
Author(s):  
D I Tetelbaum ◽  
O N Gorshkov ◽  
S A Trushun ◽  
D G Revin ◽  
D M Gaponova ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Si Quantum Dots ◽  
Ion Implanted

Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers

2015 ◽  
Vol 821-823 ◽  
pp. 1003-1006
Author(s):  
Roy Dagher ◽  
Rami Khazaka ◽  
Stephane Vézian ◽  
Monique Teissiere ◽  
Adrien Michon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Confinement ◽  
Luminescence Band ◽  
Structural Investigation ◽  
Wetting Layer ◽  
Fixed Temperature ◽  
Structural Investigations ◽  
Temperature And Pressure ◽  
Si Quantum Dots

Structural investigations of Si quantum dots (QDs) grown by CVD on two different heterostructures: AlN/Si (111) and 3C-SiC/Si (100) are conducted. The Si QDs have been grown using silane as precursor, diluted in hydrogen, at fixed temperature and pressure (830°C - 800mbar). High densities of dots can be obtained (up to 1011 cm-2) with typical heights below 10nm. The kinetic of deposition lets suppose the presence of an initial wetting layer before the dots formation. Different durations are required for nucleating dots on AlN and 3C-SiC. Si QDs on AlN present a luminescence band which can be attributed to quantum confinement.

Electronic structure of Ge/Si quantum dots

2002 ◽  
Vol 13 (1) ◽  
pp. 75-80 ◽  
Author(s):  
A V Dvurechenskii ◽  
A V Nenashev ◽  
A I Yakimov
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Si Quantum Dots

scholarly journals Silicon Quantum Dots in a Dielectric Matrix for All-Silicon Tandem Solar Cells

2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Eun-Chel Cho ◽  
Martin A. Green ◽  
Gavin Conibeer ◽  
Dengyuan Song ◽  
Young-Hyun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Quantum Confinement ◽  
Collection Efficiency ◽  
Film Material ◽  
Defect States ◽  
Silicon Quantum Dots ◽  
Rich Material ◽  
Silicon Based ◽  
Si Quantum Dots

We report work progress on the growth of Si quantum dots in different matrices for future photovoltaic applications. The work reported here seeks to engineer a wide-bandgap silicon-based thin-film material by using quantum confinement in silicon quantum dots and to utilize this in complete thin-film silicon-based tandem cell, without the constraints of lattice matching, but which nonetheless gives an enhanced efficiency through the increased spectral collection efficiency. Coherent-sized quantum dots, dispersed in a matrix of silicon carbide, nitride, or oxide, were fabricated by precipitation of Si-rich material deposited by reactive sputtering or PECVD. Bandgap opening of Si QDs in nitride is more blue-shifted than that of Si QD in oxide, while clear evidence of quantum confinement in Si quantum dots in carbide was hard to obtain, probably due to many surface and defect states. The PL decay shows that the lifetimes vary from 10 to 70 microseconds for diameter of 3.4 nm dot with increasing detection wavelength.

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