scholarly journals P‐10.1: Low‐voltage flexible thin‐film transistor based on C 3 N 4 /polyvinylpyrrolidone composite electrolyte

2021 ◽  
Vol 52 (S1) ◽  
pp. 566-569
Author(s):  
Yao-Hua Yang ◽  
Qi Chen ◽  
Xi-Feng Li ◽  
Jian-Hua Zhang ◽  
Jun Li
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Composite Electrolyte

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation

Low voltage operated, sol–gel derived oxide thin film transistor based on high-k Gd2O3 gate dielectric

2013 ◽  
Vol 138 (1) ◽  
pp. 1-4 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
Beyong-Hwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
High K

Molecular Dielectric Multilayers for Ultra-Low-Voltage Organic Thin Film Transistors

2005 ◽  
Vol 871 ◽  
Author(s):  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Layer By Layer ◽  
Organic Thin Film ◽  
Operating Characteristics ◽  
Threshold Voltages ◽  
Broad Variety ◽  
Organic Dielectric

AbstractVery thin (2.3 – 5.5 nm) self-assembled organic dielectric multilayers have been integrated into organic thin-film transistor (OTFT) structures to achieve sub-1 V operating characteristics. These new dielectrics are fabricated via layer-by-layer solution phase deposition of molecular silicon precursors, resulting in smooth, nanostructurally well-defined, strongly-adherent, thermally stable, virtually pinhole-free, organosiloxane thin films having exceptionally large electrical capacitances (400-700 nFcm-2). These multilayers enable OTFT function at very low source-drain, gate, and threshold voltages, and are compatible with a broad variety of vapor- or solution-deposited p- and n-channel organic semiconductors.

A Flexible Amorphous Bi5Nb3O15Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature

Langmuir ◽  
2009 ◽  
Vol 25 (20) ◽  
pp. 12349-12354 ◽  
Author(s):  
Kyung-Hoon Cho ◽  
Tae-Geun Seong ◽  
Joo-Young Choi ◽  
Jin-Seong Kim ◽  
Jae-Hong Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Gate Insulator
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