A Flexible Amorphous Bi5Nb3O15Film for the Gate Insulator of the Low-Voltage Operating Pentacene Thin-Film Transistor Fabricated at Room Temperature

Langmuir ◽  
2009 ◽  
Vol 25 (20) ◽  
pp. 12349-12354 ◽  
Author(s):  
Kyung-Hoon Cho ◽  
Tae-Geun Seong ◽  
Joo-Young Choi ◽  
Jin-Seong Kim ◽  
Jae-Hong Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Gate Insulator

scholarly journals USING PERCOLATIVE CRYSTALLINE 0.3 CUO/PVDF NANOCOMPOSITE GATE DIELECTRIC FOR FABRICATING HIGH-EFFECT MOBILITY THIN FILM TRANSISTOR OPERATING AT LOW VOLTAGE

2021 ◽  
Vol 9 (11) ◽  
pp. 1095-1101
Author(s):  
Debabrata Bhadra ◽  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Thin Film Transistor ◽  
Dielectric Constants ◽  
Gate Insulator ◽  
Electrical Characteristics ◽  
Capacitance Density

Thin-film transistor (TFT) with various layers of crystalline Poly-vinylidene fluoride (PVDF)/CuO percolative nanocomposites based on Anthracene as a gate dielectric insulator have been fabricated. A device with excellent electrical characteristics at low operating voltages (<1V) has been designed. Different layers (L) of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constants (εr). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films have been investigated. This device was showed highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of -1.6V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such a High-ε three layered (3L) PVDF/CuO gate dielectric appears to be highly promising candidates for organic non-volatile memory, sensor and field-effect transistors (FETs).

Low-Voltage and Hysteresis-Free N-Type Organic Thin Film Transistor and Complementary Inverter with Bilayer Gate Insulator

2009 ◽  
Vol 48 (11) ◽  
pp. 111504 ◽  
Author(s):  
Yoshihide Fujisaki ◽  
Masashi Mamada ◽  
Daisuke Kumaki ◽  
Shizuo Tokito ◽  
Yoshiro Yamashita
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Low-Voltage Organic Thin-Film Transistor With High-κ LaYOx Gate Insulator

2019 ◽  
Vol 16 (9) ◽  
pp. 231-237
Author(s):  
Chih-Kang Deng ◽  
Chun-Hu Cheng ◽  
Bi-Shiou Chiou
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor
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