(Invited) High Performance Amorphous In-W-Zn-O Thin Film Transistor with Ultra-Thin Active Channel for Low Voltage Operation

2018 ◽  
Vol 86 (11) ◽  
pp. 91-93 ◽  
Author(s):  
Po-Tsun Liu ◽  
Po-Yi Kuo ◽  
Shan-Ming Hsu
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Low Voltage Operation ◽  
Active Channel

Low-voltage operation of the organic thin film transistor with a diagonal configuration

2003 ◽  
Author(s):  
Toshihide Kamata ◽  
Manabu Yoshida ◽  
Sei Uemura ◽  
Satoshi Hoshino ◽  
Noriyuki Takada ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Low Voltage Operation

BaTiO3/ Teflon Nanocomposite Ferroelectric Thin Films for Low Voltage Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 616-621
Author(s):  
Wei Qiang Wang ◽  
Jia Qi Niu ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Nanocomposite Film ◽  
High Performance ◽  
Low Voltage ◽  
Cost Effective ◽  
Frequency Change ◽  
Nanocomposite Thin Film ◽  
Teflon Af ◽  
Low Voltage Operation

We present a simple and cost effective method for the design and fabrication of electrowetting devices using a nanocomposite thin film of BaTiO3 and Teflon-AF as the dielectric layer to achieve low voltage operation. The nanocomposite film is prepared by using Teflon-AF as matrix and BaTiO3 nanoparticles as the filler material. The solution is spin coated to deposit thin film on metal electrodes. The characterization results show that the nanocomposite thin film can serve as the dielectric for EWOD with a high dielectric constant and a crack free hydrophobic film. To test the electrowetting effect, the variation of droplet contact angle achieved with DC voltage, AC voltage and AC frequency change are fully experimented. The EWOD device with nanocomposite dielectric layer also manipulates water droplet at low driving voltages. This study shows the potential of using ferroelectric nanocomposite film as the dielectric layer in high-performance EWOD devices.

Low Voltage, High Performance Thin Film Transistor with HfInZnO Channel and HfO[sub 2] Gate Dielectric

2010 ◽  
Vol 13 (8) ◽  
pp. H274 ◽  
Author(s):  
Dae-Ho Son ◽  
Dae-Hwan Kim ◽  
Jung-Hye Kim ◽  
Shi-Joon Sung ◽  
Eun-Ae Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor

Interface Engineering With Polystyrene for High-Performance, Low-Voltage Driven Organic Thin Film Transistor

2020 ◽  
Vol 67 (4) ◽  
pp. 1751-1756
Author(s):  
Md. Mehedi Hasan ◽  
Md. Mobaidul Islam ◽  
Xiuling Li ◽  
Mingqian He ◽  
Robert Manley ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Interface Engineering ◽  
Organic Thin Film Transistor

High-Performance Indium Oxide Thin Film Transistor with ITO Source/Drain Electrodes Fabricated by Reactive Sputtering

2014 ◽  
Vol 852 ◽  
pp. 319-323
Author(s):  
Xin An Zhang ◽  
Xian Kun Yu ◽  
Jun Xia Zhai ◽  
Yang Jiao ◽  
Ling Hong Ding ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
High Performance ◽  
Thin Film Transistor ◽  
Electrical Measurement ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Channel Mobility ◽  
Active Channel ◽  
Indium Oxide Thin Film

We report on the fabrication of bottom gate thin film transistors with indium oxide (In2O3) thin films as the active channel layers. The films were deposited on SiO2/Si substrate at room temperature by direct current (DC) magnetron sputtering. The ITO films were used as source and drain electrodes. The In2O3 films were structurally characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The results revealed that the films were amorphous in nature. Electrical measurement has revealed that the devices operate as an n-channel enhancement mode and exhibit an on/off ratio of 106. The threshold voltage is-3V and the channel mobility on the order of 22.3 cm2/Vs has been determined.

High performance and the low voltage operating InGaZnO thin film transistor

2010 ◽  
Vol 10 (4) ◽  
pp. e157-e160 ◽  
Author(s):  
Dae-ho Son ◽  
Dae-Hwan Kim ◽  
Shi-Joon Sung ◽  
Eun-Ae Jung ◽  
Jin-Kyu Kang
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Voltage ◽  
Thin Film Transistor
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