Electric Fields and Interfacial Phase‐Change Memory Structures

Author(s):  
Paul Fons ◽  
Alexander V. Kolobov ◽  
Yuta Saito
2019 ◽  
Vol 91 (11) ◽  
pp. 1777-1786 ◽  
Author(s):  
Yuta Saito ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
Junji Tominaga ◽  
...  

Abstract 2D van der Waals chalcogenides such as topological insulators and transition-metal dichalcogenides and their heterostructures are now at the forefront of semiconductor research. In this paper, we discuss the fundamental features and advantages of van der Waals bonded superlattices over conventional superlattices made of 3D materials and describe in more detail one practical example, namely, interfacial phase change memory based on GeTe–Sb2Te3 superlattice structures.


2019 ◽  
Vol 114 (13) ◽  
pp. 132102 ◽  
Author(s):  
Yuta Saito ◽  
Alexander V. Kolobov ◽  
Paul Fons ◽  
Kirill V. Mitrofanov ◽  
Kotaro Makino ◽  
...  

Small ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 1704514 ◽  
Author(s):  
Philippe Kowalczyk ◽  
Françoise Hippert ◽  
Nicolas Bernier ◽  
Cristian Mocuta ◽  
Chiara Sabbione ◽  
...  

Nano Futures ◽  
2017 ◽  
Vol 1 (2) ◽  
pp. 025003 ◽  
Author(s):  
Xilin Zhou ◽  
Jitendra K Behera ◽  
Shilong Lv ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
...  

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Jinwoong Kim ◽  
Jeongwoo Kim ◽  
Young-Sun Song ◽  
Ruqian Wu ◽  
Seung-Hoon Jhi ◽  
...  

2019 ◽  
Vol 213 ◽  
pp. 303-319 ◽  
Author(s):  
Nobuki Inoue ◽  
Hisao Nakamura

We investigated the resistive switching mechanism between the high-resistance state (HRS) and the low-resistance state (LRS) of the GeTe–Sb2Te3 (GST) superlattice.


2019 ◽  
Vol 125 (18) ◽  
pp. 184501 ◽  
Author(s):  
Kye L. Okabe ◽  
Aditya Sood ◽  
Eilam Yalon ◽  
Christopher M. Neumann ◽  
Mehdi Asheghi ◽  
...  

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