Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO 2 and Al 2 O 3 /SiO 2 Gate Dielectrics

2020 ◽  
Vol 14 (10) ◽  
pp. 2000304
Author(s):  
Younjin Jang ◽  
Jun Shik Kim ◽  
Sukin Kang ◽  
Jihun Kim ◽  
Yonghee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Instability ◽  
P Type

Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2504-2507 ◽  
Author(s):  
Seul Ki Lee ◽  
Sung Il Hong ◽  
Yeon Ho Lee ◽  
Se Won Lee ◽  
Won Ju Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectrics

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

2012 ◽  
Vol 101 (23) ◽  
pp. 233304 ◽  
Author(s):  
M. Rapisarda ◽  
G. Fortunato ◽  
A. Valletta ◽  
S. Jacob ◽  
M. Benwadih ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Self Heating ◽  
Electrical Instability ◽  
Heating Effects ◽  
P Type

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

2009 ◽  
Vol 94 (22) ◽  
pp. 222112 ◽  
Author(s):  
Jeong-Min Lee ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectrics

scholarly journals A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2502 ◽  
Author(s):  
Gwomei Wu ◽  
Anup Sahoo ◽  
Dave Chen ◽  
J. Chang
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Width ◽  
Capacitance Density ◽  
Voltage Variation ◽  
Igzo Tft

A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) has been carried out using SiO2, Si3N4, and Ta2O5 dielectric materials. The channel width dependent device electrical performances were investigated using three different sizes of 500 μm, 1000 μm, and 1500 μm. The reliability characteristics were revealed by the threshold voltage variation and drain current variation under positive bias stress. The e-beam deposited high-k dielectric Ta2O5 exhibited the highest stability at the stress voltage of 3 V for 1000 s due to its high capacitance density at 34.1 nF/cm2. The threshold voltage variation along the channel width decreased from SiO2, then Si3N4, to Ta2O5, because of the increased insulating property and density of capacitance. The SiO2-based a-IGZO TFT achieved a high field effect mobility of 27.9 cm2/V·s and on–off current ratio > 107 at the lower channel width of 500 μm. The gate leakage current also decreased with increasing the channel width/length ratio. In addition, the SiO2 gate dielectric-based a-IGZO TFT could be a faster device, whereas the Ta2O5 gate dielectric would be a good candidate for a higher reliability component with adequate surface treatment.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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