Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics

2012 ◽  
Vol 52 (9-10) ◽  
pp. 2504-2507 ◽  
Author(s):  
Seul Ki Lee ◽  
Sung Il Hong ◽  
Yeon Ho Lee ◽  
Se Won Lee ◽  
Won Ju Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectrics

Comparative study of electrical instabilities in top-gate InGaZnO thin film transistors with Al2O3 and Al2O3/SiNx gate dielectrics

2009 ◽  
Vol 94 (22) ◽  
pp. 222112 ◽  
Author(s):  
Jeong-Min Lee ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Thin Film Transistors ◽  
Gate Dielectrics

scholarly journals A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2502 ◽  
Author(s):  
Gwomei Wu ◽  
Anup Sahoo ◽  
Dave Chen ◽  
J. Chang
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Width ◽  
Capacitance Density ◽  
Voltage Variation ◽  
Igzo Tft

A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) has been carried out using SiO2, Si3N4, and Ta2O5 dielectric materials. The channel width dependent device electrical performances were investigated using three different sizes of 500 μm, 1000 μm, and 1500 μm. The reliability characteristics were revealed by the threshold voltage variation and drain current variation under positive bias stress. The e-beam deposited high-k dielectric Ta2O5 exhibited the highest stability at the stress voltage of 3 V for 1000 s due to its high capacitance density at 34.1 nF/cm2. The threshold voltage variation along the channel width decreased from SiO2, then Si3N4, to Ta2O5, because of the increased insulating property and density of capacitance. The SiO2-based a-IGZO TFT achieved a high field effect mobility of 27.9 cm2/V·s and on–off current ratio > 107 at the lower channel width of 500 μm. The gate leakage current also decreased with increasing the channel width/length ratio. In addition, the SiO2 gate dielectric-based a-IGZO TFT could be a faster device, whereas the Ta2O5 gate dielectric would be a good candidate for a higher reliability component with adequate surface treatment.

Growth related properties of pentacene thin film transistors with different gate dielectrics

2008 ◽  
Vol 354 (15-16) ◽  
pp. 1598-1607 ◽  
Author(s):  
A.-L. Deman ◽  
M. Erouel ◽  
D. Lallemand ◽  
M. Phaner-Goutorbe ◽  
P. Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics

Effects of Polystyrene Gate Dielectrics with Various Molecular Weights on Electrical Characteristics of Pentacene Thin-Film Transistors

2014 ◽  
Vol 598 (1) ◽  
pp. 129-134 ◽  
Author(s):  
Sung Woo Lee ◽  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Jong Sun Choi ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Molecular Weights
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