Temperature-dependent electrical instability of p-type SnO thin-film transistors

2016 ◽  
Vol 34 (4) ◽  
pp. 041210 ◽  
Author(s):  
Jeong-Hwan Lee ◽  
Yong-Jin Choi ◽  
Chan-Yong Jeong ◽  
Chang-Woo Lee ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Temperature Dependent ◽  
Electrical Instability ◽  
P Type

scholarly journals Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics

2016 ◽  
Vol 108 (26) ◽  
pp. 263503 ◽  
Author(s):  
Jiawei Zhang ◽  
Xi Kong ◽  
Jia Yang ◽  
Yunpeng Li ◽  
Joshua Wilson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Temperature Dependent ◽  
Band Tail ◽  
P Type ◽  
Tin Monoxide

Self-heating effects on the electrical instability of fully printed p-type organic thin film transistors

2012 ◽  
Vol 101 (23) ◽  
pp. 233304 ◽  
Author(s):  
M. Rapisarda ◽  
G. Fortunato ◽  
A. Valletta ◽  
S. Jacob ◽  
M. Benwadih ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Self Heating ◽  
Electrical Instability ◽  
Heating Effects ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

Temperature-dependent charge injection and transport in pentacene thin-film transistors

2015 ◽  
Vol 30 (11) ◽  
pp. 115020 ◽  
Author(s):  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Ji-Ho Park ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Charge Injection ◽  
Temperature Dependent

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document