Structural and electronic properties of pentacene/pentacenequinone thin films prepared by Langmuir–Blodgett technique

Structural and electronic properties of pentacene/pentacenequinone thin films prepared on various solid-state substrates by the Langmuir–Blodgett technique are reported. Amorphous structure of the prepared films has been proved by XRD measurements. Oxygen-related defects have been identified in the Langmuir–Blodgett films as a consequence of the exposure of pentacene Langmuir layer to air. Crystallization induced by thermal treatment of the prepared amorphous thin films has been observed. Electronic properties of pentacene/ pentacenequinone Langmuir–Blodgett films have been investigated in the contact-less architecture using electrochemical techniques. The energy band diagram of the amorphous pentacene/pentacenequinone Langmuir–Blodgett film on a metallic surface was constructed from the obtained electrochemical data.